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VO3150A

0.5 A Output Current IGBT and MOSFET Driver

Vishay Semiconductors 

0.5 A Output Current IGBT and

MOSFET Driver

VO3150A

Vishay Semiconductors

THERMAL CHARACTERISTICS

PARAMETER

SYMBOL VALUE

UNIT

LED power dissipation

Pdiss

45

mW

Output power dissipation

Pdiss

250

mW

TA

Total power dissipation

Ptot

285

mW

Maximum LED junction temperature

Tjmax.

125

°C

Maximum output die junction temperature

Tjmax.

125

°C

Thermal resistance, junction emitter to board

θJEB

169

°C/W

θCA

TC

θDC

Package

θEC

TJD

θDE

TJE

Thermal resistance, junction emitter to case

Thermal resistance, junction detector to board

Thermal resistance, junction detector to case

Thermal resistance, junction emitter to

junction detector

Thermal resistance, case to ambient

θJEC

θJDB

θJDC

θJED

θCA

192

82

80

200

2645

°C/W

°C/W

°C/W

°C/W

°C/W

θDB

19996

θEB

TB

θBA

TA

Note

• The thermal model is represented in the thermal network below. Each resistance value given in this model can be used to calculate the

temperatures at each node for a given operating condition. The thermal resistance from board to ambient will be dependent on the type of

PCB, layout and thickness of copper traces. For a detailed explanation of the thermal model, please reference Vishay's Thermal

Characteristics of Optocouplers application note.

ELECTRICAL CHARACTERISTICS (1)

PARAMETER

TEST CONDITION

SYMBOL MIN.

TYP.

MAX.

UNIT

High level output current

IF = 16 mA, Rg = 10 Ω, Cg = 20 nF,

VCC = 15 V, VEE = 0 V

IOH (3)

0.5

Low level output current

IF = 0 mA, Rg = 10 Ω, Cg = 20 nF,

VCC = 15 V, VEE = 0 V

IOL (3)

0.5

High level output voltage

IO = - 100 mA

VOH (4)

VCC - 4 VCC - 2.1

Low level output voltage

IO = 100 mA

VOL

0.2

0.5

High level supply current

Output open, IF = 7 mA to 16 mA

ICCH

2.5

Low level supply current

Output open, VF = - 3 V to + 0.8 V

ICCL

2.5

Threshold input current low to high

IO = 0 mA, VO > 5 V

IFLH

2.1

5

Threshold input voltage high to low

VFHL

0.8

Input forward voltage

IF = 10 mA

VF

1

1.3

1.6

Temperature coefficient of forward

voltage

IF = 10 mA

ΔVF/ΔTA

- 1.4

A

A

V

V

mA

mA

mA

V

V

mV/°C

Input reverse breakdown voltage

IR = 10 μA

BVΡ

5

V

Input capacitance

f = 1 MHz, VF = 0 V

CIN

60

pF

UVLO threshold

VO ≥ 5 V

IF = 10 mA

VUVLO+

11

12.6

13.5

V

VUVLO-

9.5

10.7

12

V

UVLO hysteresis

UVLOHYS

1.9

V

Notes

(1) Minimum and maximum values were tested over recommended operating conditions (Tamb = - 40 °C to 110 °C, IF(ON) = 7 mA to 16 mA,

VF(OFF) = - 3 V to 0.8 V, VCC = 15 V to 32 V, VEE = ground) unless otherwise specified. Typical values are characteristics of the device and are

the result of engineering evaluations. Typical values are for information only and are not part of the testing requirements. All typical values

were measured at Tamb = 25 °C and with VCC - VEE = 32 V.

(2) Maximum pulse width = 50 μs, maximum duty cycle = 0.5 %.

(3) Maximum pulse width = 10 μs, maximum duty cycle = 0.2 %. This value is intended to allow for component tolerances for designs with

IO peak minimum = 0.5 A.

(4) In this test VOH is measured with a dc load current. When driving capacitive loads VOH will approach VCC as IOH approaches zero A. Maximum

pulse width = 1 ms, maximum duty cycle = 20 %.

Document Number: 81808

Rev. 1.1, 14-Jan-10

For technical questions, contact: optocoupleranswers@vishay.com

www.vishay.com

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