VN5012AK-E Ver la hoja de datos (PDF) - STMicroelectronics
Número de pieza
componentes Descripción
Fabricante
VN5012AK-E
STMicroelectronics
VN5012AK-E Datasheet PDF : 30 Pages
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VN5012AK-E
Electrical specifications
Table 6.
Symbol
Power section (continued)
Parameter
Test conditions
Min. Typ. Max. Unit
IS
IL(off)
VF
Supply current
Off-state output current(2)
Output - VCC diode
voltage(2)
Off-state; VCC = 13 V; Tj = 25 °C;
VIN = VOUT = VSENSE = VCSD = 0 V
On-state; VCC = 13 V; VIN = 5 V;
IOUT = 0 A
VIN = VOUT = 0 V; VCC = 13 V;
Tj = 25 °C
VIN = VOUT = 0 V; VCC = 13 V;
Tj = 125 °C
-IOUT = 8 A; Tj = 150 °C
2(1) 5(1) µA
1.5 3 μΑ
0 0.01 3 µA
0
5 µA
0.7 V
1. PowerMOS leakage included.
2. For each channel.
Table 7. Switching (VCC = 13 V; Tj = 25°C)
Symbol
Parameter
Test conditions
td(on)
td(off)
dVOUT/dt(on)
dVOUT/dt(off)
WON
WOFF
Turn-on delay time
Turn-off delay time
Turn-on voltage slope
Turn-off voltage slope
Switching energy losses
during twon
Switching energy losses
during twoff
RL = 2.6 Ω (see Figure 8)
RL = 2.6 Ω (see Figure 8)
RL = 2.6 Ω
RL = 2.6 Ω
RL = 2.6 Ω (see Figure 8)
RL = 2.6 Ω (see Figure 8)
Min. Typ. Max. Unit
30
55
See Figure 21
See Figure 22
µs
µs
V/µs
V/µs
1.2
mJ
0.7
mJ
Table 8. Logic input
Symbol
Parameter
VIL
IIL
VIH
IIH
VI(hyst)
Input low level voltage
Low level input current
Input high level voltage
High level input current
Input hysteresis voltage
VICL Input clamp voltage
VCSDL
ICSDL
VCSDH
ICSDH
CS_DIS low level voltage
Low level CS_DIS current
CS_DIS high level voltage
High level CS_DIS current
Test conditions
VIN = 0.9 V
VIN = 2.1 V
IIN = 1 mA
IIN = -1 mA
VCSD = 0.9 V
VCSD = 2.1 V
Min. Typ. Max. Unit
0.9 V
1
µA
2.1
V
10 µA
0.25
V
5.5
7V
-0.7
V
0.9 V
1
µA
2.1
V
10 µA
Doc ID 13240 Rev 9
9/30
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