VN5012AK-E Ver la hoja de datos (PDF) - STMicroelectronics

Número de pieza

componentes Descripción

Fabricante

VN5012AK-E

Single channel high side driver with analog current sense for automotive applications

STMicroelectronics 

Electrical specifications

Table 4. Absolute maximum ratings (continued)

Symbol

Parameter

EMAX

VESD

VESD

Maximum switching energy

(L = 1.25 mH; RL = 0 Ω; Vbat = 13.5 V; Tjstart = 150 °C;

IOUT = IlimL(typ.))

Electrostatic discharge

(Human Body Model: R = 1.5 KΩ; C = 100 pF)

– INPUT

– CURRENT SENSE

– CS_DIS

– OUTPUT

– VCC

Charge device model (CDM-AEC-Q100-011)

Tj Junction operating temperature

Tstg Storage temperature

VN5012AK-E

Value

Unit

508

mJ

4000

V

2000

V

4000

V

2000

V

4000

V

5000

V

5000

V

750

V

-40 to 150

°C

-55 to 150

°C

2.2

Thermal data

Table 5. Thermal data

Symbol

Parameter

Rthj-case Thermal resistance junction case (max) (with one channel on)

Rthj-amb Thermal resistance junction ambient (max)

Max value

0.4

See Figure 29

Unit

°C/W

°C/W

2.3

Electrical characteristics

8 V < VCC < 36 V; -40°C < Tj < 150°C, unless otherwise specified.

Table 6.

Symbol

Power section

Parameter

Test conditions

VCC Operating supply voltage

VUSD Undervoltage shutdown

VUSDhyst

Undervoltage shutdown

hysteresis

RON On-state resistance(2)

Vclamp Clamp voltage

IOUT = 5 A; Tj = 25 °C

IOUT = 5 A; Tj = 150 °C

IOUT = 5 A; VCC = 5 V; Tj = 25 °C

IS = 20 mA

Min. Typ. Max. Unit

4.5 13 36 V

3.5 4.5 V

0.5

V

12 mΩ

24 mΩ

16 mΩ

41 46 52 V

8/30

Doc ID 13240 Rev 9

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