DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

VN5012AK-E(2008) Ver la hoja de datos (PDF) - STMicroelectronics

Número de pieza
componentes Descripción
Fabricante
VN5012AK-E Datasheet PDF : 31 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
Electrical specifications
VN5012AK-E
Table 8. Logic input
Symbol
Parameter
Test conditions
VIL
IIL
VIH
IIH
VI(hyst)
VICL
VCSDL
ICSDL
Input low level voltage
Low level input current
Input high level voltage
VIN=0.9V
High level input current VIN=2.1V
Input hysteresis voltage
Input clamp voltage
IIN=1mA
IIN=-1mA
CS_DIS low level voltage
Low level CS_DIS
current
VCSD=0.9V
VCSDH
CS_DIS high level
voltage
ICSDH
High level CS_DIS
current
VCSD=2.1V
VCSD(hyst)
CS_DIS hysteresis
voltage
VCSCL
CS_DIS clamp voltage
ICSD=1mA
ICSD=-1mA
Min. Typ. Max. Unit
0.9 V
1
µA
2.1
V
10 µA
0.25
V
5.5
7V
-0.7
V
0.9 V
1
µA
2.1
V
10 µA
0.25
V
5.5
7V
-0.7
V
Table 9. Protections and diagnostics (1)
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
IlimH
IlimL
TTSD
TR
TRS
THYST
VDEMAG
VON
DC Short circuit current
Short circuit current
during thermal cycling
Shutdown temperature
Reset temperature
Thermal reset of
STATUS
Thermal hysteresis
(TTSD-TR)
Turn-off output voltage
clamp
Output voltage drop
limitation
VCC=13V
5V<VCC<36V
VCC=13V TR<Tj<TTSD
IOUT=2A; VIN=0; L=6mH
IOUT= 0.5A;
Tj= -40°C...+150°C
(see Figure 9)
45
65
90
A
90
A
24
A
150 175 200 °C
TRS + 1 TRS + 5
°C
135
°C
7
°C
VCC-41 VCC-46 VCC-52 V
25
mV
1. To ensure long term reliability under heavy overload or short circuit conditions, protection and related
diagnostic signals must be used together with a proper software strategy. If the device is subjected to
abnormal conditions, this software must limit the duration and number of activation cycles.
10/31

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]