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VN5050JTR-E Ver la hoja de datos (PDF) - STMicroelectronics

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VN5050JTR-E Datasheet PDF : 31 Pages
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VN5050J-E
Electrical specifications
2.3
Electrical characteristics
Values specified in this section are for 8V<VCC<36V; -40°C<Tj<150°C, unless otherwise
specified.
Table 6. Power section
Symbol
Parameter
Test conditions
VCC
VUSD
VUSDhyst
Operating supply voltage
Undervoltage shutdown
Undervoltage shut-down
hysteresis
RON
Vclamp
IS
IL(off1)
IL(off2)
VF
On state resistance(2)
IOUT=1A; Tj=25°C
IOUT=1A; Tj=150°C
IOUT=1A; VCC=5V; Tj=25°C
Clamp voltage
IS=20mA
Supply current
Off State; VCC=13V; Tj=25°C;
VIN=VOUT=VSENSE=VCSD=0V
On State; VCC=13V; VIN=5V;
IOUT=0A
Off state output
current(2)
VIN=VOUT=0V; VCC=13V;
Tj=25°C
VIN=VOUT=0V; VCC=13V;
Tj=125°C
Off state output current(2) VIN=0V; VOUT=4V
Output - VCC diode
voltage(2)
-IOUT=2A; Tj=150°C
(1) PowerMOS leakage included.
(2) For each channel.
Min. Typ. Max. Unit
4.5 13 36 V
3.5 4.5 V
0.5
V
50 m
100 m
65 m
41 46 52 V
2(1) 5(1) µA
1.9 3.5 mA
0 0.01 3
0
5 µA
-75
0
0.7 V
Table 7. Switching (VCC = 13V; Tj = 25°C)
Symbol
Parameter
Test conditions
td(on) Turn- On delay time
td(off) Turn- Off delay time
dVOUT/dt(on) Turn- On voltage slope
dVOUT/dt(off) Turn- Off voltage slope
WON
Switching energy losses
during twon
WOFF
Switching energy losses
during twoff
RL= 6.5(see Figure 5)
RL= 6.5(see Figure 5)
RL= 6.5
RL= 6.5
RL= 6.5(see Figure 5)
RL= 6.5(see Figure 5)
Min. Typ. Max. Unit
20
35
See Figure 21
See Figure 23
µs
µs
Vµs
Vµs
0.2
mJ
0.2
mJ
9/31

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