VN5050J-E(2006) Ver la hoja de datos (PDF) - STMicroelectronics

Número de pieza

componentes Descripción

Fabricante

VN5050J-E
(Rev.:2006)

Single channel high side driver for automotive applications

STMicroelectronics 

VN5050J-E

2.2

Thermal Data

Table 3. Thermal Data

Symbol

Parameter

Rthj-case Thermal resistance junction-case

Rthj-amb Thermal resistance junction-ambient

Electrical specifications

Max Value

2.8

See Figure 31

Unit

°C/W

°C/W

2.3

Electrical Characteristics

8V<VCC<36V; -40°C<Tj<150°C, unless otherwise specified.

Table 4. Power section

Symbol

Parameter

Test Conditions

Min. Typ. Max. Unit

VCC

VUSD

VUSDhyst

Operating supply voltage

Undervoltage shutdown

Undervoltage Shut-down

hysteresis

4.5 13

36

V

3.5 4.5 V

0.5

V

RON

On state resistance

Vclamp Clamp Voltage

IOUT=1A; Tj=25°C

IOUT=1A; Tj=150°C

IOUT=1A; VCC=5V; Tj=25°C

IS=20mA

50 mΩ

100 mΩ

65 mΩ

41

46

52

V

IS

Supply current

Off State; VCC=13V; VIN=VOUT=0

Tj=25°C;

On State; VCC=13V; VIN=5V; IOUT=0A

2(1)

5(1)

µA

1.9 3.5 mA

IL(off1)

IL(off2)

VF

Off state output current

Output - VCC diode voltage

VIN=VOUT=0V; VCC=13V; Tj=25°C

VIN=VOUT=0V; VCC=13V; Tj=125°C

VIN=0V; VOUT=4V

-IOUT=2A; Tj=150°C

0 0.01 3

0

5

µA

-75

0

0.7 V

(1) PowerMOS leakage included.

Table 5. Switching (VCC=13V)

Symbol

Parameter

td(on)

Turn-on delay time

td(off)

Turn-off delay time

dVOUT/dt(on) Turn-on voltage slope

dVOUT/dt(off) Turn-off voltage slope

WON

Switching energy losses

during twon

WOFF

Switching energy losses

during twoff

Test Conditions

RL=6.5Ω (see Figure 6)

RL=6.5Ω (see Figure 6)

RL=6.5Ω

RL=6.5Ω

RL=6.5Ω (see Figure 6)

RL=6.5Ω (see Figure 6)

Min. Typ. Max. Unit

20

µs

35

µs

see Figure 21

V/µs

see Figure 22

V/µs

0.2

mJ

0.2

mJ

5/23

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