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VN5050J-E(2006) Ver la hoja de datos (PDF) - STMicroelectronics

Número de pieza
componentes Descripción
Fabricante
VN5050J-E
(Rev.:2006)
ST-Microelectronics
STMicroelectronics ST-Microelectronics
VN5050J-E Datasheet PDF : 23 Pages
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Electrical specifications
2
Electrical specifications
VN5050J-E
Figure 3. Current and Voltage Conventions
VCC
IS
VF
VCC
ISD
VSD
IIN
VIN
STAT_DIS
OUTPUT
INPUT
STATUS
GND
IGND
IOUT
ISTAT
VOUT
VSTAT
VF = VOUT - VCC during reverse battery condition
2.1
Absolute Maximum Ratings
Table 2. Absolute Maximum Ratings
Symbol
Parameter
VCC DC supply voltage
-VCC Reverse DC supply voltage
-IGND DC reverse ground pin current
IOUT DC output current
-IOUT Reverse DC output current
IIN DC input current
ISTAT DC status current
ISTAT_DIS DC status disable current
Maximum switching energy
EMAX (L=1.5mH; RL=0; Vbat=13.5V; Tjstart=150°C; IOUT =
IlimL(Typ.) )
Electrostatic Discharge (Human Body Model: R=1.5KΩ;
C=100pF)
VESD
– INPUT
– STATUS
– STAT_DIS
– OUTPUT
– VCC
VESD Charge device model (CDM-AEC-Q100-011)
Tj Junction operating temperature
Tstg Storage temperature
Value
Unit
41
V
0.3
V
200
mA
Internally limited
A
12
A
+10 / -1
mA
+10 / -1
mA
+10 / -1
mA
51
mJ
4000
V
4000
V
4000
V
5000
V
5000
V
750
V
-40 to 150
°C
-55 to 150
°C
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