VN0605T Ver la hoja de datos (PDF) - Calogic, LLC

Número de pieza

componentes Descripción

Fabricante

VN0605T

N-Channel Enhancement-Mode MOS Transistor

Calogic, LLC 

CORPORATION

VN0605T

SPECIFICATIONSa

SYMBOL

PARAMETER

STATIC

V(BR)DSS Drain-Source Breakdown Voltage

VGS(th)

Gate-Threshold Voltage

IGSS

Gate-Body Leakage

TYPb

70

2.3

IDSS

Zero Gate Voltage Drain Current

ID(ON)

On-State Drain Currentc

700

4.5

rDS(ON)

Drain-Source On-Resistancec

3

5.5

gFS

Forward Transconductancec

180

gOS

Common Source Output Conductancec 500

DYNAMIC

Ciss

Input Capacitance

16

Coss

Output Capacitance

11

Crss

Reverse Transfer Capacitance

2

SWITCHING

tON

Turn-On Time

7

tOFF

Turn-Off Time

11

Notes:

a. TA = 25oC unless otherwise noted.

b. For design aid only, not subject to production testing.

c. Pulse test; PW = ≤300µS, duty cycle ≤2%.

LIMITS

MIN MAX

60

0.8

3.0

±100

±500

1

500

500

7.5

5

10

80

60

25

5

20

20

UNIT

TEST CONDITIONS

ID = 10µA, VGS = 0V

V

VDS = VGS, ID = 1mA

VGS = ±20V, VDS = 0V

nA

TJ = 125oC

VDS = 50V, VGS = 0V

µA

TJ = 125oC

mA VDS = 10V, VGS = 10V

VGS = 4.5V, ID = 50mA

Ω

VGS = 10V, ID = 0.5A

TJ = 125oC

mS VDS = 10V, ID = 0.2A

µS VDS = 50V, ID = 50mA

pF VDS = 25V, VGS = 0V, f = 1MHz

VDD = 30V, RL = 150Ω, ID = 0.2A

VGEN = 10V, RG = 25Ω

ns

(Switching time is essentially independent of

operating temperature)

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