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VIPER53EDIP-E Ver la hoja de datos (PDF) - STMicroelectronics

Número de pieza
componentes Descripción
Fabricante
VIPER53EDIP-E
ST-Microelectronics
STMicroelectronics ST-Microelectronics
VIPER53EDIP-E Datasheet PDF : 31 Pages
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Electrical characteristics
2
Electrical characteristics
VIPer53EDIP - E / VIPer53ESP - E
TJ = 25°C, VDD = 13V, unless otherwise specified
Table 3. Power section
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
BVDSS
Drain-Source
Voltage
ID = 1mA; VCOMP = 0V
620
V
IDSS
Off State Drain
Current
VDS = 500V; VCOMP = 0V; Tj = 125°C
150 µA
RDS(on)
Static Drain-Source
On State Resistance
ID = 1A; VCOMP = 4.5V; VTOVL = 0V
TJ = 25°C
TJ = 100°C
0.9 1
1.7
tfv Fall Time
ID = 0.2A; VIN = 300V (1)
100
ns
trv Rise Time
ID = 1A; VIN = 300V (1)
50
ns
Coss Drain Capacitance VDS = 25V
170
pF
CEon
Effective Output
Capacitance
200V < VDSon < 400V (2)
60
pF
1. On clamped inductive load
2. This parameter can be used to compute the energy dissipated at turn on Eton according to the initial drain
to source voltage VDSon and the following formula:
Eton
=
12--
CEon
3002
-V---3-D--0-S---0-o---n-⎠⎞
1.5
Table 4. Oscillator Section
Symbol
Parameter
Test Conditions
FOSC1
Oscillator Frequency
Initial Accuracy
RT = 8k; CT = 2.2nF
Figure 15 on page 23
FOSC2
Oscillator Frequency
Total Variation
RT = 8k; CT = 2.2nF
Figure 17 on page 24
VDD = VDDon ... VDDovp;
TJ = 0 ... 100°C
VOSChi
Oscillator Peak
Voltage
VOSClo
Oscillator Valley
Voltage
Min. Typ. Max. Unit
95 100 105 kHz
93 100 107 kHz
9
V
4
V
4/31
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