VIS
VG36128401BT / VG36128801BT / VG36128161BT
CMOS Synchronous Dynamic RAM
AC Characteristics (Ta = 0 ~ 70°C, VDD = VDDQ = 3.3 ± 0.3V , VSS = VSSQ = 0V, unless otherwise noted)
Test Conditions
AC input Levels (VIH/VIL)
Input rise and fall time
2.0 / 0.8V
1ns
Input timing reference level /
Output timing reference level
Output load condition
1.4V
50pF
Output Load Conditions
VDDQ
VOUT
Device
Under
Test
VDDQ
Ω Z = 50
50PF
Document :1G5-0183
Rev.1
Page 7