V10P12 Ver la hoja de datos (PDF) - Vishay Semiconductors

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Fabricante

V10P12

High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier

Vishay Semiconductors 

V10P12

Vishay General Semiconductor

New Product

ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)

PARAMETER

TEST CONDITIONS

SYMBOL

TYP.

Breakdown voltage

Instantaneous forward voltage

IR = 1.0 mA

IF = 5 A

IF = 10 A

IF = 5 A

IF = 10 A

Reverse current

VR = 90 V

VR = 120 V

Notes

(1) Pulse test: 300 μs pulse width, 1 % duty cycle

(2) Pulse test: Pulse width  40 ms

TA = 25 °C

TA = 25 °C

TA = 125 °C

TA = 25 °C

TA = 125 °C

TA = 25 °C

TA = 125 °C

VBR

VF (1)

IR (2)

120 (minimum)

0.57

0.74

0.51

0.62

6

4.5

16

8.5

MAX.

-

-

0.82

-

0.70

-

-

400

30

UNIT

V

V

μA

mA

μA

mA

THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)

PARAMETER

SYMBOL

Typical thermal resistance

RJA (1)

RJL

Note

(1) Units mounted on recommended PCB 1 oz. pad layout

V10P12

60

4

UNIT

°C/W

ORDERING INFORMATION (Example)

PREFERRED P/N

UNIT WEIGHT (g) PREFERRED PACKAGE CODE

V10P12-M3/86A

0.10

86A

V10P12-M3/87A

0.10

87A

V10P12HM3/86A (1)

0.10

86A

V10P12HM3/87A (1)

0.10

87A

Note

(1) Automotive grade

BASE QUANTITY

1500

6500

1500

6500

DELIVERY MODE

7" diameter plastic tape and reel

13" diameter plastic tape and reel

7" diameter plastic tape and reel

13" diameter plastic tape and reel

www.vishay.com

2

For technical questions within your region, please contact one of the following: Document Number: 89171

DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

Revision: 19-Apr-11

This document is subject to change without notice.

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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