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Fabricante

UTC2SA1020

PNP EPITAXIAL SILICON TRANSISTOR

Unisonic Technologies 

UTC2SA1020 PNP EPITAXIAL SILICON TRANSISTOR

SILICON PNP EPITAXIAL

TRANSISTOR

DESCRIPTION

The UTC 2SA1020 is designed for power amplifier and

power switching applications.

FEATURES

*Low collector saturation voltage:

VCE(sat)=-0.5V(max.) (IC=-1A)

*High speed switching time: tstg=1.0µs(Typ.)

*Complement to UTC 2SC2655

1

SOT-89

ABSOLUTE MAXIMUM RATINGS (Ta=25°C)

PARAMETER

SYMBOL

Collector-Base Voltage

VCBO

Collector-Emitter Voltage

VCEO

Emitter-Base Voltage

VEBO

Collector Current

Ic

Collector Power Dissipation

PC

Collector Power Dissipation

PC*

Junction Temperature

Tj

Storage Temperature

TSTG

* : Mounted on cermic substrate( 250mm2 × 0.8t )

1:EMITTER 2:COLLECTOR 3:BASE

VALUE

-50

-50

-5

-2

0.5

1

150

-55 ~ +150

UNIT

V

V

V

A

W

W

°C

°C

ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

Collector cut-off current

Emitter cut-off current

Collector to emitter breakdown

ICBO

IEBO

V(BR)CEO

VCB=-50V, IE=0

VEB=-5V, IC=0

Ic=-10mA, IB=0

-50

voltage

DC Current Gain

Collector to emitter saturation

hFE1

hFE2

VCE(sat)

VCE=-2V, IC=-0.5A

70

VCE=-2V, IC=-1.5A

40

Ic=-1A, IB=-0.05A

voltage

Base to emitter saturation voltage

VBE(sat)

Ic=-1A, IB=-0.05A

Transition frequency

fT

VCE=-2V, Ic=-0.5A

Collector output capacitance

Cob

VCB=-10V, IE=0, f=1MHz

Switching time Turn-on time

ton

Storage time

tstg

Fall time

tf

TYP

100

40

0.1

1.0

0.1

MAX

-1.0

-1.0

240

-0.5

-1.2

UNIT

µA

µA

V

V

V

MHz

pF

µs

µs

µs

UTC UNISONIC TECHNOLOGIES CO. LTD 1

QW-R208-021,A

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