DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

UT138E-8 Ver la hoja de datos (PDF) - Unisonic Technologies

Número de pieza
componentes Descripción
Fabricante
UT138E-8
UTC
Unisonic Technologies UTC
UT138E-8 Datasheet PDF : 5 Pages
1 2 3 4 5
UT138E
TRIAC
ABSOLUTE MAXIMUM RATING (TJ=25°C)
PARAMETER
SYMBOL
RATINGS
UNIT
UT138E-5
500
V
Repetitive Peak Off State Voltag
UT138E-6
VDRM
600
V
UT138E-8
800
V
RMS On-state Current (Full sine wave, TMB99°C)
IT(RMS)
12
A
Non-Repetitive Peak. On-State Current t=20mS
(Full sine wave, TJ=25°C prior to surge) t=16.7mS
ITSM
I2t For Fusing (t=10ms)
I2t
95
A
105
A
45
A2s
Repetitive Rate of Rise of On-state
Current After Triggering
(ITM=20A, IG=0.2A, dIG/dt=0.2A/μs)
T2+ G+
T2+ G-
T2- G-
T2- G+
dIT/dt
50
A/μs
50
A/μs
50
A/μs
10
A/μs
Peak Gate Voltage
VGM
5
V
Peak Gate Current
Peak Gate Power
IGM
2
A
PGM
5
W
Average Gate Power (Over any 20ms period)
PG(AV)
0.5
W
Operating Junction Temperature
TJ
125
°C
Storage Temperature
TSTG
-40~150
°C
Notes: Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac
may switch to the on-state. The rate of rise of current should not exceed 15A/μs.
THERMAL RESISTANCES
PARAMETER
SYMBOL
MIN
TYP
Thermal Resistance, Junciton to Ambient In free air
θJA
60
Thermal Resistance, Junction to
Mounting Base
Full cycle
Half cycle
θJC
STATIC CHARACTERISTICS (TJ=25°C, unless otherwise specified)
MAX
1.5
2.0
UNIT
K/W
K/W
PARAMETER
Gate Trigger Current
Latching Current
Holding Current
On-State Voltage
Gate Trigger Voltage
Off-state Leakage Current
SYMBOL
IGT
IL
IH
VT
VGT
ID
TEST CONDITIONS
T2+ G+
VD=12V, IT=0.1A
T2+ G-
T2- G-
T2- G+
T2+ G+
VD=12V, IGT =0.1A
T2+ G-
T2- G-
T2- G+
VD=12V, IGT=0.1A
IT=15A
VD=12V, IT=0.1A
VD=400V, IT=0.1A, TJ=125°C
VD=VDRM(max) , TJ=125°C
MIN
0.25
DYNAMIC CHARACTERISTICS (TJ=25°C, unless otherwise specified)
TYP
2.5
4.0
5.0
11
3.2
16
4.0
5.5
4.0
1.4
0.7
0.4
0.1
MAX
10
10
10
25
30
40
30
40
30
1.65
1.5
0.5
UNIT
mA
mA
mA
V
V
V
mA
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
Critical Rate Of Rise Of Off-State
Voltage
dVD/dt
VDM=67% VDRM(max), TJ=125°C
Exponential waveform,
Gate open circuit
50
V/μs
Gate Controlled Turn-on Time
tgt
ITM=16A, VD=VDRM(max),
IG=0.1A dIG/dt=5A/μs
2
μs
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 5
QW-R401-011.E

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]