UT2340L-AE3-R Ver la hoja de datos (PDF) - Unisonic Technologies

Número de pieza

componentes Descripción

Fabricante

UT2340L-AE3-R

-4.2A, -20V P-CHANNEL ENHANCEMENT MODE

Unisonic Technologies 

UT2340

 TYPICAL CHARACTERISTICS

Drain Current vs. Drain-Source

Voltage

10

9

-3V

-2.5V

8

7

6

VGS=-4V~-10V

-2V

5

4

Note:

3

1.TA=25°C

2

2.Pulse test

-1.5V

1

00 1 2 3 4 5 6 7

Drain-Source Voltage, -VDS (V)

Gate Charge Characteristics

12

VDS=-4V

10

VGS=-4.5V

ID=-3.5A

Pulsed

8

6

4

2

0

0

3

6

9

12 15

Total Gate Charge, QG (nC)

Drain-Source On-Resistance vs.

Junction Temperature

2

VGS=-4.5V

ID=-4.2A

Pulsed

1.5

1

0.5

0

25 50 75 100 125 150

Junction Temperature, TJ (°C)

UNISONIC TECHNOLOGIES CO., LTD

www.unisonic.com.tw

Power MOSFET

1000

800

Drain-Source On-Resistance vs.

Gate-Source Voltage

ID=-2A -4A

Note:

1.TA=25°C

2.Pulse test

600

400

200

0

0

2

4

6

8

Gate-Source Voltage, -VGS (V)

5000

Capacitance Characteristics

CISS

500

COSS

50

0

CRSS

5

10

15

20

Drain-Source Voltage, -VDS (V)

Breakdown Voltage vs. Junction

Temperature

1.4

ID=-0.25mA

Pulsed

1.2

1

0.8

25 50 75 100 125 150

Junction Temperature, TJ (°C)

5 of 7

QW-R502-162.F

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