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UT2340
(Rev.:2009)

P-CHANNEL ENHANCEMENT MODE

Unisonic Technologies 

UT2340

Power MOSFET

„ ABSOLUTE MAXIMUM RATINGS (Ta = 25°C, unless otherwise specified)

PARAMETER

SYMBOL

RATINGS

UNIT

Drain-Source Voltage

VDSS

-20

V

Gate-Source Voltage

Continuous Drain Current (Note 3)

Pulsed Drain Current (Note 1, 2)

VGSS

ID

IDM

±8

V

-2

A

-10

A

Total Power Dissipation

Junction Temperature

Strong Temperature

PD

TJ

TSTG

0.46

W

+150

°C

-55 ~ +150

°C

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

„ THERMAL DATA

PARAMETER

Junction to Ambient (Note 3)

Junction to Case

SYMBOL

MIN

TYP

θJA

250

θJC

75

„ ELECTRICAL CHARACTERISTICS (TJ =25°C, unless otherwise specified)

MAX

UNIT

°C/W

°C/W

PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

BVDSS VGS =0 V, ID =-250 µA

-20

Drain-Source Leakage Current

IDSS VDS=-16V, VGS =0 V

Gate-Source Leakage Current

IGSS

VGS = ±8 V, VDS = 0 V

Breakdown Voltage Temperature Coefficient ΔBVDSS/ΔTJ ID=-250μA,Referenced to 25°C

-15

ON CHARACTERISTICS

Gate Threshold Voltage

VGS(TH) VDS =VGS, ID =-250 µA

-0.4 -0.9

VGS =-4.5V, ID =-2A

52

Drain-Source On-State Resistance (Note 2) RDS(ON) VGS =-2.5 V, ID =-1.7A

78

VGS=-1.8V, ID =-1.2A

DYNAMIC PARAMETERS

Input Capacitance

Output Capacitance

CISS

600

COSS VDS=-10V, VGS =0V, f=1.0MHz

175

Reverse Transfer Capacitance

CRSS

80

SWITCHING PARAMETERS

Turn-ON Delay Time (Note 2)

tD(ON)

6

Turn-ON Rise Time

Turn-OFF Delay Time

tR

VDD=-5V,ID=-0.5A,VGS =-4.5V,

9

tD(OFF) RGEN =6 Ω

31

Turn-OFF Fall Time

tF

26

Total Gate Charge (Note 2)

Gate-Source Charge

QG

8

QGS VDS=-10V, VGS =-4.5V, ID=-2A

1.3

Gate-Drain Charge

QGD

2.2

DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS

Drain-Source Diode Forward Voltage(Note2) VSD VGS =0V, IS = -0.42A (Note )

-0.7

Maximum Continuous Drain-Source Diode

Forward Current

IS

Notes: 1. Pulse width limited by TJ(MAX)

2. Pulse width ≤300μs, duty cycle ≤2%.

3. Surface mounted on 1 in2 copper pad of FR4 board; 270°C/W when mounted on min.

MAX UNIT

V

-1 µA

±100 nA

mV/℃

-1.5 V

70 mΩ

110 mΩ

210 mΩ

pF

pF

pF

12 ns

18 ns

50 ns

42 ns

11 nC

nC

nC

-1.2 V

-0.42 A

UNISONIC TECHNOLOGIES CO., LTD

www.unisonic.com.tw

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QW-R502-162.C

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