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UT2327L Ver la hoja de datos (PDF) - Unisonic Technologies

Número de pieza
componentes Descripción
Fabricante
UT2327L
UTC
Unisonic Technologies UTC
UT2327L Datasheet PDF : 5 Pages
1 2 3 4 5
UT2327
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATING
UNIT
Drain-Source Voltage
VDS
- 20
V
Gate-Source Voltage
VGS
± 12
V
Continuous Drain Current (Note 3)
TA=25°C
TA=70°C
ID
-2.6
A
-2.1
A
Pulsed Drain Current (Note 1, 2)
IDM
-10
A
Total Power Dissipation (TA=25°C)
PD
1.38
W
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL CHARACTERISTICS
PARAMETER
Junction to Ambient (Note 3)
SYMBOL
θJA
RATING
90
ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise specified)
UNIT
°C/W
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS VGS=0V, ID=-250uA
-20
Drain-Source Leakage Current
TJ=25°C
TJ=70°C
IDSS
VDS=-20V, VGS=0V
VDS=-16V, VGS=0V
Gate-Source Leakage Current
IGSS
VGS=±12V
Breakdown Voltage Temperature Coefficient BVDSS/TJ Reference to 25, ID=-1mA
-0.1
ON CHARACTERISTICS
Gate Threshold Voltage
Drain-Source On-State Resistance (Note 2)
Forward Transconductance
VGS(TH)
RDS(ON)
gFS
VDS=VGS, ID=-250uA
VGS=-5V, ID=-2.8A
VGS=-2.8V, ID=-2.0A
VDS=-5V, ID=-2.8A
-0.5
4.4
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
CISS
295
COSS
VGS=0V, VDS=-6V, f=1.0MHz
170
CRSS
65
SWITCHING CHARACTERISTICS
Total Gate Charge (Note 2)
Gate-Source Charge
Gate-Drain Charge
Turn-ON Delay Time (Note 2)
Turn-ON Rise Time
Turn-OFF Delay Time
Turn-OFF Fall Time
QG
QGS
QGD
tD(ON)
tR
tD(OFF)
tF
VDS=-6V, VGS=-5V, ID=-2.8A
VDS=-15V, VGS=-10V,
ID=-1A, RG=6, RD=15
5.2
1.36
0.6
5.2
9.7
19
29
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Continuous Drain-Source Diode
Forward Current
IS
VD=VG=0V, VS=-1.2V
Maximum Pulsed Drain-Source Diode
Forward Current (Note 1)
ISM
Drain-Source Diode Forward Voltage(Note2)
VSD
TJ=25°C, IS=-1.6A, VGS=0V
Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Pulse width 300us, duty cycle 2%.
3. Surface mounted on 1 in2 copper pad of FR4 board; 270°C /W when mounted on min.
MAX
-1
-10
±100
130
190
10
-1
-10
-1.2
UNIT
V
uA
uA
nA
V/°C
V
m
m
S
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
A
A
V
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 5
QW-R502-108.D

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