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UT2321G

P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Unisonic Technologies 

UT2321

Power MOSFET

 ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise specified)

PARAMETER

SYMBOL

RATINGS

UNIT

Drain-Source Voltage

VDSS

-20

V

Gate-Source Voltage

VGSS

±12

V

Continuous Drain Current (Note 2)

ID

-3.8

A

Pulsed Drain Current (Note 2)

Power Dissipation (Note 3)

IDM

-15.2

A

PD

1.25

W

Junction Temperature

TJ

+150

°C

Storage Temperature

TSTG

-55 ~ +150

°C

Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

2. Pulse width limited by TJ(MAX)

3. Surface mounted on 1 in 2 copper pad of FR4 board.

 THERMAL CHARACTERISTICS

PARAMETER

Junction to Ambient

SYMBOL

θJA

RATINGS

100

 ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise specified)

UNIT

°C/W

PARAMETER

SYMBOL

TEST CONDITIONS

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

Drain-Source Leakage Current

Gate-Source Leakage Current

Forward

Reverse

ON CHARACTERISTICS(Note)

Gate-Threshold Voltage

Static Drain-Source On-Resistance

BVDSS

IDSS

IGSS

VGS=0V, ID=-250µA

VDS=-16V, VGS=0V

VGS=12V, VDS=0V

VGS=-12V, VDS=0V

VGS(TH)

RDS(ON)

VDS=VGS, ID=-250µA

VGS=-4.5V, ID=-2.4A

VGS=-2.5V, ID=-2.0A

DYNAMIC PARAMETERS

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

CISS

COSS

CRSS

VDS=-10 V, VGS =0V, f=1.0MHz

SWITCHING PARAMETERS

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

Turn-ON Delay Time

Turn-ON Rise Time

Turn-OFF Delay Time

Turn-OFF Fall-Time

QG

QGS

QGD

tD(ON)

tR

tD(OFF)

tF

VDS=-10V, VGS=-4.5V, ID=-2.4A

VDD=-10V, ID=-1A, VGS=-4.5V,

RGEN=6 Ω

DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS

Diode Forward Voltage(Note)

VSD

VGS=0V, IS =-0.42A

Maximum Body-Diode Continuous

Current

IS

Note: Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.

MIN TYP MAX UNIT

-20

V

-1 µA

100 nA

-100 nA

-0.4

-1.0 V

45 55 mΩ

65 80 mΩ

1500

pF

270

pF

185

pF

14.8 19 nC

2.8

nC

4.4

nC

13 24 ns

8 24 ns

65 256 ns

29 72 ns

-1.2 V

-0.42 A

UNISONIC TECHNOLOGIES CO., LTD

www.unisonic.com.tw

2 of 4

QW-R502-249.F

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