UT2321L Ver la hoja de datos (PDF) - Unisonic Technologies
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UT2321L Datasheet PDF : 4 Pages
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UNISONIC TECHNOLOGIES CO., LTD
UT2321
P-CHANNEL ENHANCEMENT
MODE FIELD EFFECT
TRANSISTOR
DESCRIPTION
The UT2321 uses advanced trench technology to provide
excellent RDS(ON), low gate charge and operation with low gate
voltages. This device is suitable for use as a load switch or in PWM
applications.
FEATURES
* RDS(ON) ≤ 55mΩ @ VGS=-4.5V, ID=-2.4A
* RDS(ON) ≤ 80mΩ @ VGS=-2.5V, ID=-2.0A
* Low capacitance
* Low gate charge
* Fast switching capability
* Avalanche energy specified
SYMBOL
3.Drain
Power MOSFET
1.Gate
2.Source
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
UT2321L-AE3-R
UT2321G-AE3-R
Note: Pin Assignment: G: Gate S: Source D: Drain
Package
SOT-23
Pin Assignment
1
2
3
G
S
D
Packing
Tape Reel
MARKING
www.unisonic.com.tw
Copyright © 2015 Unisonic Technologies Co., Ltd
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QW-R502-249.F
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