UT2302(2007) Ver la hoja de datos (PDF) - Unisonic Technologies

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UT2302
(Rev.:2007)

N-CHANNEL ENHANCEMENT MODE

Unisonic Technologies 

UT2302

Power MOSFET

„ ABSOLUTE MAXIMUM RATINGS (Ta = 25℃, unless otherwise specified)

PARAMETER

SYMBOL

RATINGS

UNIT

Drain-Source Voltage

VDSS

20

V

Gate-Source Voltage

VGSS

±8

V

Continuous Drain Current

ID

2.4

A

Pulsed Drain Current

IDM

10

A

Power Dissipation

Junction Temperature

Ta=25°C

1.25

W

Ta=70°C

PD

0.8

W

TJ

+150

℃

Storage Temperature

TSTG

-55 ~ +150

°C

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

„ THERMAL DATA

PARAMETER

Junction to Ambient (Note 3)

SYMBOL MIN

θJA

TYP

„ ELECTRICAL CHARACTERISTICS (Ta =25°C, unless otherwise specified)

MAX

100

UNIT

℃ /W

PARAMETER

SYMBOL

TEST CONDITIONS

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

BVDSS VGS =0 V, ID =250 µA

Zero Gate Voltage Drain Current

IDSS

VDS =20 V, VGS =0 V

Gate-Body Leakage

IGSS

VDS =0 V, VGS = ±8V

ON CHARACTERISTICS

Gate-Threshold Voltage

VGS(TH) VDS =VGS, ID =250 µA

Drain-Source On-Resistance (Note2)

RDS(ON)

VGS =4.5 V, ID =3.6 A

VGS =2.5 V, ID =3.1 A

On State Drain Current (Note2)

DYNAMIC PARAMETERS

ID(ON) VDS ≥ 5V, VGS =4.5 V

Input Capacitance

Output Capacitance

CISS

COSS

VDS =10 V, VGS =0V, f=1MHz

Reverse Transfer Capacitance

SWITCHING PARAMETERS

CRSS

Turn-ON Delay Time

Turn-ON Rise Time

Turn-OFF Delay Time

tD(ON)

tR

tD(OFF)

VDD =10V, R =10 Ω, ID=1A,

VGEN =4.5V, RG =6 Ω

Turn-OFF Fall-Time

tF

Total Gate Charge

Gate-Source Charge

QG

QGS

VDS =10 V, VGS =4.5 V, ID =3.6 A

Gate-Drain Charge

QGD

SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS

Drain-Source Diode Forward Voltage

VSD

VGS =0 V, IS =1.0 A

Maximum Continuous Drain-Source

Diode Forward Current

IS

Note:1. Pulse width limited by TJ(MAX)

2. Pulse width ≤300us, duty cycle ≤2%.

3. Surface mounted on FR4 board t≦5 sec.

MIN TYP MAX UNIT

20

V

1.0 µA

±100 nA

0.45

V

50 65 Ω

75 95 Ω

6

A

450

pF

70

pF

43

pF

7 15 ns

55 80 ns

16 60 ns

10 25 ns

5.2 10 nC

0.65

nC

1.5

nC

0.76 1.2 V

1.6 A

UNISONIC TECHNOLOGIES CO., LTD

www.unisonic.com.tw

2 of 5

QW-R502-114.A

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