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UPG100P Ver la hoja de datos (PDF) - NEC => Renesas Technology

Número de pieza
componentes Descripción
Fabricante
UPG100P
NEC
NEC => Renesas Technology NEC
UPG100P Datasheet PDF : 8 Pages
1 2 3 4 5 6 7 8
DDAATTAA SSHHEEEETT
GaAs INTEGRATED CIRCUIT
PPG100P, PPG101P
WIDE BAND AMPLIFIER CHIPS
DESCRIPTION
PPG100P and PPG101P are GaAs integrated circuits designed as wide band amplifiers. Both devices are
available in chip form.
PPG100P is low noise amplifier from 50 MHz to 3 GHz and PPG101P is a medium power amplifier in the same
frequency band. These devices are most suitable for the IF stage of microwave communication system and the
measurement equipment.
FEATURES
• Wide band : f = 50 MHz to 3 GHz
ORDERING INFORMATION
PART NUMBER
PPG100P
PPG101P
FORM
chip
chip
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)
PPG100P
Drain Voltage
VDD
+8
Gate Voltage
VGG
ð8
Input Voltage
Vin
ð3 to +0.6
Input Power
Pin
+15
Total Power Dissipation
Ptot*1
1.5
Operating Temperature
Topr*2
ð65 to +125
Storage Temperature
Tstg
ð65 to +175
*1 Mounted with AuSn hard solder
*2 The temperature of base material baside the chip
PPG101P
+10
ð8
ð5 to +0.6
+15
1.5
ð65 to +125
ð65 to +175
V
V
V
dBm
W
°C
°C
Document No. P12402EJ2V0DS00 (2nd edition)
(Previous No. IC-3144)
Date Published February 1997 N
Printed in Japan
©
1992

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