UPG100B Ver la hoja de datos (PDF) - NEC => Renesas Technology
Número de pieza
componentes Descripción
Fabricante
UPG100B Datasheet PDF : 4 Pages
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UPG100B, UPG100P
ABSOLUTE MAXIMUM RATINGS1 (TA = 25°C)
SYMBOLS
PARAMETERS
UNITS RATINGS
VDD
Drain Voltage
V
+8
VGG
Gate Voltage
V
-8
VIN
Input Voltage
V -3 to +0.6
PIN
Input Power
dBm
+15
PT
Total Power Dissipation2 W
1.5
Top
TSTG
Operating Temperature
Storage Temperature
°C -65 to +125
°C -65 to +175
Notes:
1. Operation in excess of any one of these conditions may result in
permanent damage.
2. TCASE (TC) ≤ 125°C
RECOMMENDED
OPERATING CONDITIONS
SYMBOLS PARAMETERS UNITS MIN TYP MAX
VDD Drain Voltage
V
4.5 5.0 5.5
VGG Gate Voltage
V -5.5 -5.0 -4.5
PIN Input Power
dBm
10
TOP Operating Temperature °C -50 25 +80
TYPICAL PERFORMANCE CURVES (TA = 25°C)
INPUT AND OUTPUT RETURN LOSS
vs. FREQUENCY
0
VDD = +5V
VGG = -5V
10
RLOUT
20
RLIN
30
40
10 20 50 100 200 500 1000
5000
Frequency, f (MHz)
ISOLATION vs. FREQUENCY
0
VDD = + 5 V
VGG = - 5 V
10
20
30
40
50
10 20 50 100 200 500 1000
5000
Frequency, f (MHz)
OUTPUT POWER vs. INPUT POWER
VDD = +5v
VGG = -5V
+10
f = 1 GHz
f = 2 GHz
f = 3 GHz
0
-10
-20
-10
0
Input Power, PIN (dBm)
D. C. POWER DERATING CURVE
2.0
1.5
1.0
0.5
0
50
100
150
200
Case Temperature, TC (C°)
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