SNA-186-TR1 Ver la hoja de datos (PDF) - Stanford Microdevices

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Fabricante

SNA-186-TR1

DC-8 GHz, Cascadable GaAs HBT MMIC Amplifier

Stanford Microdevices 

Absolute Maximum Ratings

Parameter

Absolute

Maximum

Device Current

Power Dissipation

RF Input Power

75mA

330mW

100mW

Junction Temperature

Operating Temperature

+200C

-45C to +85C

Storage Temperature

-65C to +150C

Notes:

1. Operation of this device above any one of these

parameters may cause permanent damage.

MTTF vs. Temperature @ Id = 50mA

Lead

Te m p e ra tu re

J u n c tio n

Te m p e ra tu re

M T T F (h rs)

+50C

+155C

1000000

+85C

+190C

100000

+ 115 C

+220C

10000

Thermal Resistance (Lead-Junction): 531° C/W

SNA-186 DC-8 GHz Cascadable MMIC Amplifier

Part Number Ordering Information

Part Number Devices Per Reel

SNA-1 86 -TR 1

1000

Reel Size

7"

SNA-1 86 -TR 2

3000

13"

SNA-1 86 -TR 3

5000

13"

R ecom m ended B ias Resistor Values

Supply

5V

7.5V 9V

12V 15V

Voltage(V s)

R bias (Ohms) 20

70

100 160 220

20V

320

Typical Biasing Configuration

P in D e s ig n a tio n

1

R F in

2

GND

RF out and

3

B ia s

4

GND

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