NGA-286 Ver la hoja de datos (PDF) - Stanford Microdevices
Número de pieza
componentes Descripción
Fabricante
NGA-286 Datasheet PDF : 7 Pages
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Pin #
1
2
3
4
PPrreelilmimininaarryy
NGA-286 DC-6.0 GHz 4.0V GaAs HBT
Function
RF IN
GND
RF OUT/
BIAS
GND
Description
RF input pin. This pin requires the use of
an external DC blocking capacitor chosen
for the frequency of operation.
Connection to ground. For best
performance use via holes (as close to
ground leads as possible) to reduce lead
inductance.
RF output and bias pin. DC voltage is
present on this pin, therefore a DC
blocking capacitor is necessary for
proper operation.
Same as Pin 2.
Device Schematic
Application Schematic for Operation at 850 MHz
Recommended Bias Resistor Values
Supply
Voltage(Vs)
5V
8V
9V 12V
Rbias
(Ohms)
20 82 100 160
For 9V operation or higher, a resistor with a power
handling capability of 1/2W or greater is recommended.
1uF 68pF
R bias
Vs
50 ohm
microstrip
100pF
2
1
3
4
33nH
100pF
50 ohm
microstrip
Application Schematic for Operation at 1950 MHz
1uF 22pF
R bias
Vs
50 ohm
microstrip
68pF
2
1
3
4
22nH
68pF
50 ohm
microstrip
The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or omissions.
Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change
without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not authorize or warrant any Stanford
Microdevices product for use in life-support devices and/or systems.
Copyright 2000 Stanford Microdevices, Inc. All worldwide rights reserved.
522 Almanor Ave., Sunnyvale, CA 94086
Phone: (800) SMI-MMIC
http://www.stanfordmicro.com
3
EDS-101102 Rev C
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