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UPD3734A Ver la hoja de datos (PDF) - NEC => Renesas Technology

Número de pieza
componentes Descripción
Fabricante
UPD3734A
NEC
NEC => Renesas Technology NEC
UPD3734A Datasheet PDF : 20 Pages
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µPD3734A
ELECTRICAL CHARACTERISTICS
TA = +25 ˚C, VOD = 12 V, fφ1 = 0.5 MHz, data rate = 1 MHz, storage time = 10 ms
light source: 3200 K halogen lamp + C-500S (infrared cut filter, t = 1 mm), input signal clock = 5 Vp-p
Parameter
Symbol
Test Conditions
Saturation voltage
Vsat
Saturation exposure
SE
Daylight color fluorescent lamp
Photo response non-uniformity
PRNU VOUT = 500 mV
Average dark signal
ADS Light shielding
Dark signal non-uniformity
DSNU Light shielding
Power consumption
PW
Output impedance
ZO
Response
RF
Daylight color fluorescent lamp
Response peak wavelength
Image lag
IL
VOUT = 1 V
Offset level
VOS
Input capacitance of shift register
Cφ1,
clock pin
Cφ2
Input capacitance of reset gate clock
pin
CφRB
Input capacitance of sample and hold CφSHB
clock pin
Input capacitance of transfer gate
clock pin
CφTG
Output fall delay time
td
Register imbalance
RI
VOUT = 500 mV
Total transfer efficiency
TTE
VOUT = 1 V, data rate = 4 MHz
Dynamic range
DR
Vsat/DSNU
Reset feed-through noise
RFSN Light shielding
Sample and hold noise
SHSN Light shielding,
φSHB series resistor 47
Bit noise
BN
Random noise
σ
S/H in used
S/H not in used
Resolution
MTF
Modulation transfer function at
nyquist frequency
MIN.
1.5
49
3.5
TYP.
2.0
0.029
±2
1.0
4
190
0.5
70
550
0.3
4.5
MAX.
±8
3.0
6
250
1
91
1.0
5.5
Unit
V
lx•s
%
mV
mV
mW
k
V/Ix·s
nm
%
V
400
pF
5
pF
5
pF
100
pF
92
–900
–50
80
500
–200
0
3
+500
+50
ns
%
%
times
mV
mV
4.5
mVp-p
0.9
mV
0.9
mV
65
%
6

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