UPA828TF-T1 Ver la hoja de datos (PDF) - NEC => Renesas Technology

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UPA828TF-T1

HIGH-FREQUENCY LOW-NOISE AMPLIFIER NPN SILICON EPITAXIAL TWIN TRANSISTOR (WITH BUILT-IN 6-PIN 2 u 2SC5184) THIN-TYPE SMALL MINI MOLD

NEC => Renesas Technology 

Gain Bandwidth Product vs. Collector Current

15

f = 2 GHz

VCE = 2 V

10

VCE = 1 V

5

1

23

5 7 10 20

Collector Current IC (mA)

Noise Figure vs. Collector Current

3

f = 2 GHz

2

VCE = 2 V

VCE = 1 V

1

1

2

3

5 7 10

Collector Current IC (mA)

PPA828TF

Insertion Power Gain vs. Collector Current

10

f = 2 GHz

VCE = 2 V

VCE = 1 V

5

0

1

23

5 7 10 20

Collector Current IC (mA)

Feedback Capacitance vs. Collector to Base Voltage

0.8

f = 1 MHz

0.6

0.4

0.2

0

2.0

4.0

6.0

8.0 10.0

Collector to Base Voltage VCB (V)

4

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