UPA828TF-T1 Ver la hoja de datos (PDF) - NEC => Renesas Technology

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UPA828TF-T1

HIGH-FREQUENCY LOW-NOISE AMPLIFIER NPN SILICON EPITAXIAL TWIN TRANSISTOR (WITH BUILT-IN 6-PIN 2 u 2SC5184) THIN-TYPE SMALL MINI MOLD

NEC => Renesas Technology 

PPA828TF

ELECTRICAL CHARACTERISTICS (TA = 25°C)

Parameter

Collector Cutoff Current

Emitter Cutoff Current

DC Current Gain

Gain Bandwidth Product (1)

Gain Bandwidth Product (2)

Feedback Capacitance

Insertion Power Gain (1)

Insertion Power Gain (2)

Noise Figure (1)

Noise Figure (2)

hFE Ratio

Symbol

ICBO

IEBO

hFE

fT

fT

Cre

|S21e|2

|S21e|2

NF

NF

hFE1/hFE2

Condition

VCB = 5 V, IE = 0

VEB = 1 V, IC = 0

VCE = 2 V, IC = 20 mANote 1

VCE = 2 V, IC = 20 mA, f = 2 GHz

VCE = 1 V, IC = 10 mA, f = 2 GHz

VCB = 2 V, IE = 0, f = 1 MHzNote 2

VCE = 2 V, IC = 20 mA, f = 2 GHz

VCE = 1 V, IC = 10 mA, f = 2 GHz

VCE = 2 V, IC = 3 mA, f = 2 GHz

VCE = 1 V, IC = 3 mA, f = 2 GHz

VCE = 2 V, IC = 20 mA

hFE1 = smaller hFE value among Q1 and Q2

hFE2 = larger hFE value among Q1 and Q2

MIN.

70

9

7

7

6

0.85

TYP.

11

9

0.4

8.5

7.5

1.3

1.3

MAX.

0.1

0.1

140

0.8

2

2

Unit

PA

PA

GHz

GHz

pF

dB

dB

dB

dB

Notes 1. Pulse measurement PW d 350 Ps, Duty cycle d 2%

2. Capacitance between collector and base measured with a capacitance meter (auto-balancing bridge

method). Emitter should be connected to the guard pin of capacitance meter.

hFE CLASSIFICATION

Rank

Marking

hFE value

KB

R86

70 to 140

2

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