µ PA1910
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
150
ID = −1.5 A
100
50
0
−5
−10
−15
−20
VGS - Gate to Source Voltage - V
10000
SWITCHING CHARACTERISTICS
1000
100
10
−0.1
tf
tr
td(off)
td(on)
VDD = −10 V
VGS(on) = −4.0 V
RG = 10 Ω
−1
−10
ID - Drain Current - A
DYNAMIC INPUT CHARACTERISTICS
−6
ID = −3.0 A
−5
−4
VDD = −10 V
−6 V
−3
−2
−1
0
1 234 5 6 7
QG - Gate Charge - nC
1000
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
f = 1 MHz
VGS = 0 V
Ciss
Coss
100
−0.1
Crss
−1.0
−10
VDS - Drain to Source Voltage - V
−100
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
100
VGS = 0 V
10
1
0.1
0.01
0.001
0.00010.2
0.4
0.6
0.8
1.0
1.2
VF(S-D) - Source to Drain Voltage - V
Data Sheet D13105EJ2V0DS00
5