DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

UPA1858 Ver la hoja de datos (PDF) - NEC => Renesas Technology

Número de pieza
componentes Descripción
Fabricante
UPA1858
NEC
NEC => Renesas Technology NEC
UPA1858 Datasheet PDF : 8 Pages
1 2 3 4 5 6 7 8
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
- 20
VGS = 4.5 V
4.0 V
2.5 V
- 15
- 10
-5
Pulsed
0
0
- 0.2 - 0.4 - 0.6 - 0.8
-1
VDS - Drain to Source Voltage - V
- 1.4
- 1.2
GATE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
VDS = 10 V
ID = 1.0 mA
-1
- 0.8
- 0.6
-50
0
50
100
150
Tch - Channel Temperature - °C
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
60
ID = 2.5 A
Pulsed
50
40
VGS = 2.5 V
4.0 V
30
20
4.5 V
10
0
-50
0
50
100
150
Tch - Channel Temperature - °C
µ PA1858
FORWARD TRANSFER CHARACTERISTICS
- 100
- 10
VDS = 10 V
P u ls e d
-1
- 0.1
- 0.01
TA = 125°C
75°C
25°C
25°C
- 0.001
- 0.0001
0
- 0.5 - 1 - 1.5 - 2
VGS - Gate to Source Voltage - V
- 2.5
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
100
VDS = 10 V
Pulsed
10
TA = 125°C
75°C
25°C
25°C
1
0.1
- 0.01
- 0.1
-1
- 10
ID - Drain Current - A
- 100
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
60
ID = 2.5 A
Pulsed
50
40
30
20
10
0
0
- 2 - 4 - 6 - 8 - 10 - 12
VGS - Gate to Source Voltage - V
4
Data Sheet G16276EJ1V0DS

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]