UPA1850 Ver la hoja de datos (PDF) - NEC => Renesas Technology

Número de pieza

componentes Descripción

Fabricante

UPA1850

P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING

NEC => Renesas Technology 

µ PA1850

SOURCE TO DRAIN DIODE FORWARD VOLTAGE

10

1

DYNAMIC INPUT CHARACTERISTICS

−5

ID = -2.5 A

−4

VDD = -4 V

VDD = -10 V

−3

−2

0.1

0.4

VGS = 0 V

0.8

1.2

1.6

VF(S-D) - Source to Drain Voltage - V

−1

00

3

6

9

12

15

QG - Gate Charge - nC

1000

TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH

100

62.5˚C/W

10

1

0.1

1m

10m

Mounted on Ceramic Substrate

of 5000 mm2 x 1.1 mm

Single Pulse

PD(FET1) : PD(FET2) = 1:1

100m

1

10

PW - Pulse Width - S

100

1000

Data Sheet D11818EJ2V0DS00

5

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