DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
200
VGS = −4.0 V
150
TA = 125˚C
100
75˚C
25˚C
−25˚C
50
0
−0.1
−1
−10
−100
ID - Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
200
ID = −1.5 A
VGS = −2.5 V
160
120
−4.0 V
80
−10 V
40
0
−50
1000
100
0
50
100
150
Tch - Channel Temperature -˚C
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
f = 1 MHz
Coss
Ciss
Crss
10−1
−10
VDS - Drain to Source Voltage - V
−100
µ PA1850
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
120
VGS = −10 V
100
80
TA = 125 ˚C
75 ˚C
60
25 ˚C
−25 ˚C
40
20
−0.1
−1
−10
ID - Drain Current - A
−100
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
500
ID = −1.5 A
400
300
200
100
00
−2
−4
−6
−8
−10
VGS - Gate to Source Voltage - V
1000
SWITCHING CHARACTERISTICS
tf
tr
td(off)
100
td(on)
10
−0.1
VDD = −10 V
VGS(on) = −4.0 V
RG = 10 Ω
−1
−10
ID - Drain Current - A
4
Data Sheet D11818EJ2V0DS00