UPA1850 Ver la hoja de datos (PDF) - NEC => Renesas Technology

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Fabricante

UPA1850

P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING

NEC => Renesas Technology 

DATA SHEET

MOS FIELD EFFECT TRANSISTOR

µ PA1850

P-CHANNEL MOS FIELD EFFECT TRANSISTOR

FOR SWITCHING

DESCRIPTION

The µPA1850 is a switching device which can be

driven directly by a 2.5-V power source.

The µPA1850 features a low on-state resistance and

excellent switching characteristics, and is suitable for

applications such as power switch of portable machine

and so on.

FEATURES

• Can be driven by a 2.5-V power source

• Low on-state resistance

RDS(on)1 = 115 mΩ MAX. (VGS = –4.5 V, ID = –1.5 A)

RDS(on)2 = 130 mΩ MAX. (VGS = –4.0 V, ID = –1.5 A)

RDS(on)3 = 200 mΩ MAX. (VGS = –2.5 V, ID = –1.5 A)

• Built-in G-S protection diode against ESD

ORDERING INFORMATION

PART NUMBER

PACKAGE

PACKAGE DRAWING (Unit : mm)

8

5

1 :Drain1

2, 3 :Source1

4 :Gate1

1.2 MAX.

1.0±0.05

5 :Gate2

6, 7 :Source2

0.25

8 :Drain2

1

4

3°

+5°

–3°

0.1±0.05

0.5

0.6

+0.15

–0.1

3.15 ±0.15

3.0 ±0.1

6.4 ±0.2

4.4 ±0.1

1.0 ±0.2

µPA1850GR-9JG

Power TSSOP8

0.65 0.8 MAX.

0.1

0.27

+0.03

–0.08

0.10 M

ABSOLUTE MAXIMUM RATINGS (TA = 25°C)

Drain to Source Voltage

VDSS

–12

V

Gate to Source Voltage

VGSS

–10/+5

V

Drain Current (DC)

ID(DC)

# 2.5

A

Drain Current (pulse) Note1

ID(pulse)

# 10

A

Total Power Dissipation Note2

PT

2.0

W

Channel Temperature

Tch

150

°C

Storage Temperature

Tstg

–55 to +150 °C

Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1 %

2. Mounted on ceramic substrate of 5000 mm2 x 1.1 mm

EQUIVALENT CIRCUIT

Drain1

Drain2

Gate1

Body

Diode Gate2

Body

Diode

Gate

Protection Source1

Diode

Gate

Protection Source2

Diode

Remark

The diode connected between the gate and source of the transistor serves as a protector against ESD.

When this device actually used, an additional protection circuit is externally required if a voltage

exceeding the rated voltage may be applied to this device.

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for

availability and additional information.

Document No. D11818EJ2V0DS00 (2nd edition)

The mark 5 shows major revised points.

Date Published January 2000 NS CP(K)

©

Printed in Japan

1997, 2000

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