UPA1818GR-9JG-A Ver la hoja de datos (PDF) - NEC => Renesas Technology
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UPA1818GR-9JG-A Datasheet PDF : 8 Pages
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µ PA1818
ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
Zero Gate Voltage Drain Current
Gate Leakage Current
Gate Cut-off Voltage
Forward Transfer Admittance
Drain to Source On-state Resistance
IDSS
IGSS
VGS(off)
| yfs |
RDS(on)1
VDS = −20 V, VGS = 0 V
VGS = m 12 V, VDS = 0 V
VDS = −10 V, ID = −1.0 mA
VDS = −10 V, ID = −5.0 A
VGS = −4.5 V, ID = −5.0 A
Input Capacitance
RDS(on)2
RDS(on)3
Ciss
VGS = −4.0 V, ID = −5.0 A
VGS = −2.5 V, ID = −5.0 A
VDS = −10 V
Output Capacitance
Coss
VGS = 0 V
Reverse Transfer Capacitance
Crss f = 1.0 MHz
Turn-on Delay Time
Rise Time
td(on)
VDD = −10 V, ID = −5.0 A
tr
VGS = −4.0 V
Turn-off Delay Time
td(off)
RG = 10 Ω
Fall Time
Total Gate Charge
tf
QG
VDD = −16 V
Gate to Source Charge
QGS
VGS = −4.0 V
Gate to Drain Charge
QGD
ID = −10 A
Body Diode Forward Voltage
VF(S-D) IF = 10 A, VGS = 0 V
Reverse Recovery Time
trr
IF = 10 A, VGS = 0 V
Reverse Recovery Charge
Qrr
di/dt = 100 A / µ s
MIN. TYP. MAX. UNIT
−1.0 µ A
m 10 µ A
−0.5 −1.1 −1.5 V
12 24
S
12.1 15.2 mΩ
12.7 16 mΩ
18.8 25 mΩ
2200
pF
510
pF
310
pF
23
ns
207
ns
139
ns
193
ns
20
nC
5.0
nC
6.0
nC
0.82
V
44
ns
28
nC
TEST CIRCUIT 1 SWITCHING TIME
D.U.T.
RG
PG.
VGS (−)
0
τ
τ = 1µs
Duty Cycle ≤ 1%
RL
VDD
VGS(−)
VGS
Wave Form
10 %
0
90 %
VGS
VDS(−)
90 %
VDS
VDS
0
Wave Form
td(on)
10 % 10 %
tr td(off)
90 %
tf
ton
toff
TEST CIRCUIT 2 GATE CHARGE
D.U.T.
IG = −2 mA
RL
PG.
50 Ω
VDD
2
Data Sheet G16254EJ1V0DS
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