µPA1774
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
500
400
VGS = −4V
−4.5 V
−10 V
Pulsed
300
200
100
-50 -25 0 25 50 75 100 125 150 175
Tch - Channel Temperature - °C
1000
SWITCHING CHARACTERISTICS
VDD = −30 V
VGS = −10 V
RG = 10 Ω
100
tf
td(on)
10
t d (o f f)
tr
1
−0.1
−1
−10
ID - Drain Current - A
−100
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
P u ls e d
VGS = 0 V
−10
−100
−1
−0.1
CAPACITANCE vs.
DRAIN TO SOURCE VOLTAGE
1000
C iss
100
C oss
C rss
10
1
−0.1
VGS = 0 V
f= 1 MHz
−1
−10
−100
VDS - Drain to Source Voltage - V
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
−60
−12
ID = −2.8 A
−50
VDD = −48 V
−40
−30 V
−12 V
−30
−10
−8
VGS
−6
−20
−4
−10
0
0
VDS
2
4
6
−2
0
8
10
QG - Gate Charge - nC
REVERSE RECOVERY TIME vs. DRAIN CURRENT
1000
d i/d t = 1 0 0 A /n s
VGS = 0 V
100
10
−0.01
0
−0.5
−1.0
−1.5
VSD - Source to Drain Voltage - V
1
−0.1
Data Sheet G15380EJ2V0DS
−1
−10
IF - Drain Current - A
−100
5