2N6284 Ver la hoja de datos (PDF) - ON Semiconductor

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Fabricante

2N6284

20 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 100 VOLTS, 160 WATTS

ON Semiconductor 

2N6284 (NPN); 2N6286, 2N6287 (PNP)

RB & RC VARIED TO OBTAIN DESIRED CURRENT LEVELS

VCC

- 30 V

D1 MUST BE FAST RECOVERY TYPE e.g.,

 1N5825 USED ABOVE IB [ 100 mA

 MSD6100 USED BELOW IB [ 100 mA

RC

SCOPE

TUT

V2

RB

APPROX

+ 8.0 V

0

51 D1

[ 8.0 k [ 50

V1

APPROX

- 12 V

25 ms

tr, tf v 10 ns

DUTY CYCLE = 1.0%

+ 4.0 V

FOR td AND tr, D1 IS DISCONNECTED

AND V2 = 0

FOR NPN TEST CIRCUIT REVERSE ALL POLARITIES

Figure 2. Switching Times Test Circuit

10

7.0

ts

5.0

2N6284 (NPN)

2N6287 (PNP)

3.0

2.0

tf

tr

1.0

0.7

0.5

0.3 VCC = 30 Vdc

0.2 IC/IB = 250

IB1 = IB2

0.1 TJ = 25°C

td @ VBE(off) = 0 V

0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20

IC, COLLECTOR CURRENT (AMP)

Figure 3. Switching Times

1.0

0.7 D = 0.5

0.5

0.3

0.2

0.2

0.1

0.1 0.05

0.07

0.02

0.05

0.03

0.02

0.01

0.01

0.01

SINGLE PULSE

0.02 0.03 0.05 0.1

RqJC(t) = r(t) RqJC

P(pk)

RqJC = 1.09°C/W MAX

D CURVES APPLY FOR POWER

PULSE TRAIN SHOWN

READ TIME AT t1

TJ(pk) - TC = P(pk) RqJC(t)

t1

t2

DUTY CYCLE, D = t1/t2

0.2 0.3 0.5

1.0 2.0 3.0 5.0 10

t, TIME OR PULSE WIDTH (ms)

20 30 50

Figure 4. Thermal Response

100 200 300 500 1000

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