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Fabricante

UES804R

ULTRAFAST RECTIFIERS, High Efficiency, 50A ™

Microsemi Corporation 

SCOTTSDALE DIVISION

UES804 UES804HR2

UES805 UES805HR2

UES806 UES806HR2

ULTRAFAST RECTIFIERS,

High Efficiency, 50ATM

NOTES:

1. Oscilloscope: Rise time ≤ 3ns; input impedance = 50Ω.

2. Pulse Generator: Rise time ≤ 8ns; source impedance 10Ω.

3. Current viewing resistor, non-inductive, coaxial

recommended.

OPTIONAL HIGH RELIABILITY (HR2) SCREENING

The following tests are performed on 100% of the devices.

SCREEN

1. High Temperature

2. Temperature Cycle

3. Hermetic Seal

a. Fine Leak

b. Gross Leak

4. Thermal Impedance

5. Interim Electrical Parameters

MIL-STD-750

METHOD

1032

1051

1071

3101

GO/NO GO

CONDITIONS

24 Hours @ TA = 150oC

F, 20 Cycles, -55 to +150oC. No dwell required @

25oC, T>10 min. @ extremes

H, Helium

C, Liquid

As applicable

6. High Temperature Reverse Bias (HTRB)

As Applicable

t= 48 hours, Tc = 125°C with applicable bias conditions

7. Final Electrical Parameters

GO/NO GO

As applicable

MECHANICAL SPECIFICATIONS

INCHES

MILLIMETERS

A .225 +/- .005

5.72 +/- 0.13

B .060 MIN.

1.52 MIN.

C .156 +/- .020

3.96 +/- 0.51

D .156 MIN. FLAT 3.96 MIN. FLAT

E .667 DIA. MAX 16.94 DIA. MAX

F .090 MAX

2.29 MAX.

G .677 +/- .010

17.20 +/- 0.25

H .375 MAX.

9.53 MAX.

J .140 MIN. DIA. 3.56 MIN. DIA.

K 1.000 MAX.

25.40 MAX.

Notes:

L .450 MAX.

1. Maximum stud torque: 30 inch pounds.

M .438 +/- .015

2. Maximum tension (90o) anode terminal 15 pounds for 30 N .078 MAX.

seconds

11.43 MAX.

11.13 +/- 0.38

1.98 MAX.

Copyright  2003

9-20-2004 REV B

Microsemi

Scottsdale Division

8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503

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