BAX12A Ver la hoja de datos (PDF) - Philips Electronics
Número de pieza
componentes Descripción
Fabricante
BAX12A Datasheet PDF : 8 Pages
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Philips Semiconductors
Controlled avalanche diode
Product specification
BAX12
handbook, full pagewidth
107
IR
(nA)
106
105
104
103
102
MBG696
10
0
VR = 90 V.
Solid line; maximum values. Dotted line; typical values.
100
Tj (oC)
200
Fig.5 Reverse current as a function of junction temperature.
40
handbook, halfpage
Cd
(pF)
30
20
MGD003
handbook, half age
103
PRRM
(W)
102
(1)
10
10
MBG701
0
0
10
20
30
VR (V)
f = 1 MHz; Tj = 25 °C.
Fig.6 Diode capacitance as a function of reverse
voltage; typical values.
1
10−2
10−1
1 t (ms) 10
Solid line; rectangular waveform; δ ≤ 0.01.
Dotted line; triangular waveform; δ ≤ 0.02.
(1) Limited by IRMM = 600 mA.
Fig.7 Maximum permissible repetitive peak
reverse power as a function of the pulse
duration T ≥ 50 ms; Tj = 25 °C.
1996 Sep 17
5
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