TN8 Ver la hoja de datos (PDF) - STMicroelectronics
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componentes Descripción
Fabricante
TN8 Datasheet PDF : 9 Pages
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TN8, TS8 and TYNx08 Series
ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise specified)
s SENSITIVE
Symbol
Test Conditions
IGT
VGT
VGD
VRG
IH
IL
dV/dt
VTM
Vt0
Rd
IDRM
IRRM
VD = 12 V RL = 140 Ω
VD = VDRM RL = 3.3 kΩ RGK = 220 Ω
IRG = 10 µA
IT = 50 mA RGK = 1 kΩ
IG = 1 mA RGK = 1 kΩ
VD = 65 % VDRM RGK = 220 Ω
ITM = 16 A tp = 380 µs
Threshold voltage
Dynamic resistance
VDRM = VRRM RGK = 220 Ω
Tj = 125°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
MAX.
MAX.
MIN.
MIN.
MAX.
MAX.
MIN.
MAX.
MAX.
MAX.
MAX.
TS820
200
0.8
0.1
8
5
6
5
1.6
0.85
46
5
1
Unit
µA
V
V
V
mA
mA
V/µs
V
V
mΩ
µA
mA
s STANDARD
Symbol
Test Conditions
IGT
VGT
VGD
VD = 12 V RL = 33 Ω
VD = VDRM RL = 3.3 kΩ
Tj = 125°C
IH
IL
dV/dt
VTM
Vt0
Rd
IDRM
IRRM
IT = 100 mA Gate open
IG = 1.2 IGT
VD = 67 % VDRM Gate open
ITM = 16 A tp = 380 µs
Threshold voltage
Dynamic resistance
VDRM = VRRM
Tj = 125°C
Tj = 25°C
Tj = 125°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
MIN.
MAX.
MAX.
MIN.
MAX.
MAX.
MIN.
MAX.
MAX.
MAX.
MAX.
TN805 TN815 TYNx08
0.5
2
2
5
15
15
1.3
0.2
25 40
30
30 50
70
50 150
150
1.6
0.85
46
5
2
Unit
mA
V
V
mA
mA
V/µs
V
V
mΩ
µA
mA
THERMAL RESISTANCES
Symbol
Rth(j-c)
Rth(j-a)
Junction to case (DC)
Junction to ambient (DC)
S= copper surface under tab
Parameter
S = 0.5 cm²
TO-220AB
IPAK
DPAK
Value
20
60
100
70
Unit
°C/W
°C/W
2/9
/T
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