TYN612MRG Ver la hoja de datos (PDF) - STMicroelectronics
Número de pieza
componentes Descripción
Fabricante
TYN612MRG Datasheet PDF : 8 Pages
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TYN612M
Characteristics
Figure 3.
Average and D.C. on-state current
versus case temperature
(TO-220FPAB)
IT(AV)(A)
14
13
12
11
10
9
8
7
6
5
4
3
2
1
0
0
25
D.C.
α = 180°
TC(°C)
50
75
100
125
Figure 4.
Relative variation of thermal
impedance versus pulse duration
(TO-220AB)
K=[Zth/Rth]
1.E+00
Rth(j-c)
1.E-01
Rth(j-a)
1.E-02
1.E-03
1.E-02
1.E-01
tp(s)
1.E+00
1.E+01
1.E+02
1.E+03
Figure 5.
Relative variation of thermal
impedance versus pulse duration
(TO-220FPAB)
K=[Zth/Rth]
1.E+00
Rth(j-c)
1.E-01
Rth(j-a)
1.E-02
1.E-03
1.E-02
1.E-01
tp(s)
1.E+00
1.E+01
1.E+02
1.E+03
Figure 6.
Relative variation of gate trigger
current, holding current, latching
current and gate trigger voltage
versus junction temperature
(typical values)
IGT, IH, IL, VGT [Tj] / IGT, IH, IL, VGT [Tj=25°C]
2.4
2.2
2.0
1.8
IGT
1.6
1.4 IH & IL
1.2
1.0
VGT
0.8
0.6
0.4
0.2
Tj(°C)
0.0
-40 -30 -20 -10 0 10 20 30 40 50 60 70 80 90 100 110 120 130
Figure 7.
Surge peak on-state current versus Figure 8.
number of cycles
Non-repetitive surge peak on-state
current for a sinusoidal pulse with
width tp < 10 ms, and
corresponding values of I²t
ITSM(A)
130
120
110
100
90
80
70
60
50
Repetitive
TC=105°C
40
30
20
10
0
1
Non repetitive
Tj initial=25°C
tp=10m s
O ne cycle
Number of cycles
10
100
1000
ITSM(A), I2t (A2s)
1000
100
Tj initial=25°C
ITSM
I2t
10
0.01
tP(ms)
0.10
1.00
10.00
3/8
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