TN1215-X00G-T Ver la hoja de datos (PDF) - STMicroelectronics
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TN1215-X00G-T Datasheet PDF : 12 Pages
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Characteristics
1
Characteristics
TN12, TS12 and TYNx12 Series
Table 1. Absolute ratings (limiting values)
Symbol
Parameter
IT(RMS)
IT(AV)
ITSM
I²t
dI/dt
IGM
PG(AV)
Tstg
Tj
VRGM
RMS on-state current (180° conduction angle)
Average on-state current (180° conduction angle)
Non repetitive surge peak on-state
current
I²t Value for fusing
tp = 8.3 ms
tp = 10 ms
tp = 10 ms
Critical rate of rise of on-state
current IG = 2 x IGT , tr ≤ 100 ns
F = 60 Hz
Peak gate current
tp = 20 µs
Average gate power dissipation
Storage junction temperature range
Operating junction temperature range
Tc = 105° C
Tc = 105° C
Tj = 25° C
Tj = 25° C
Tj = 125° C
Tj = 125° C
Tj = 125° C
Maximum peak reverse gate voltage (for TN12 and TYN12 only)
Value
TN12-G TN12-B/H Unit
TYN12 TS12-B/H
12
A
8
A
145
115
A
140
110
98
60
A2S
50
A/µs
4
A
1
W
- 40 to + 150
- 40 to + 125
°C
5
V
Table 2.
Symbol
Sentitive electrical characteristics (Tj = 25° C, unless otherwise specified)
Test Conditions
TS1220
IGT
VGT
VGD
VRG
IH
IL
dV/dt
VTM
Vt0
Rd
IDRM
IRRM
VD = 12 V RL = 140 Ω
VD = VDRM RL = 3.3 kΩ RGK = 220 Ω
IRG = 10 µA
IT = 50 mA RGK = 1 kΩ
IG = 1 mA RGK = 1 kΩ
VD = 65 % VDRM RGK = 220 Ω
ITM = 24 A tp = 380 µs
Threshold voltage
Dynamic resistance
VDRM = VRRM RGK = 220 Ω
Tj = 125° C
Tj = 125° C
Tj = 25° C
Tj = 125° C
Tj = 125° C
Tj = 25° C
Tj = 125° C
MAX.
MAX.
MIN.
MIN.
MAX.
MAX.
MIN.
MAX.
MAX.
MAX.
MAX.
200
0.8
0.1
8
5
6
5
1.6
0.85
30
5
2
Unit
µA
V
V
V
mA
mA
V/µs
V
V
mΩ
µA
mA
2/12
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