TSM1N80 Ver la hoja de datos (PDF) - TSC Corporation
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TSM1N80 Datasheet PDF : 9 Pages
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TSM1N80
800V N-Channel MOSFET
Electrical Specifications (Ta=25oC, unless otherwise noted)
Parameter
Conditions
Symbol
Static
Drain-Source Breakdown Voltage
Drain-Source On-State Resistance
Gate Threshold Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage
Forward Transconductance
Diode Forward Voltage
Dynamic b
VGS = 0V, ID = 1mA
VGS = 10V, ID = 0.15A
VDS = VGS, ID = 250uA
VDS = 800V, VGS = 0V
VGS = ±30V, VDS = 0V
VDS =40V, ID = 0.1A
IS = 0.2A, VGS = 0V
BVDSS
RDS(ON)
VGS(TH)
IDSS
IGSS
gfs
VSD
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching c
VDS = 640V, ID = 0.3A,
VGS = 10V
Qg
Qgs
Qgd
VDS = 25V, VGS = 0V,
f = 1.0MHz
Ciss
Coss
Crss
Turn-On Delay Time
td(on)
Turn-On Rise Time
VGS = 10V, ID = 0.3A,
tr
Turn-Off Delay Time
VDS = 400V, RG = 25Ω
td(off)
Turn-Off Fall Time
tf
Note 1: Pulse test: pulse width <=300uS, duty cycle <=2%
Note 2: (VDD = 50V, IAS=0.8A, L=170mH, RG=25Ω)
Note 3: For design reference only, not subject to production testing.
Note 4: Switching time is essentially independent of operating temperature.
Min
800
--
3
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Typ
--
18
--
--
--
0.36
--
5
1
2
155
20
2.7
10
20
16
25
Max Unit
--
V
21.6
Ω
5
V
25
uA
±10
uA
--
S
1.4
V
6
--
nC
--
200
26
pF
4
30
50
nS
45
60
2/9
Version: A10
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