TSDF1205 Ver la hoja de datos (PDF) - Vishay Semiconductors
Número de pieza
componentes Descripción
Fabricante
TSDF1205 Datasheet PDF : 7 Pages
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TSDF1205 / 1205R / 1205W / 1205RW
Vishay Semiconductors
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Total power dissipation
Junction temperature
Tamb ≤ 132 °C
Storage temperature range
Symbol
Value
Unit
VCBO
9
V
VCEO
4
V
VEBO
2
V
IC
12
mA
Ptot
40
mW
Tj
150
°C
Tstg
- 65 to + 150
°C
Maximum Thermal Resistance
Parameter
Test condition
Symbol
Value
Unit
Junction to ambient air
1)
RthJA
450
K/W
1) on glass fibre printed board (25 x 20 x 1.5) mm3 plated with 35 µm Cu
Electrical DC Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Collector-emitter cut-off current VCE = 12 V, VBE = 0
Collector-base cut-off current VCB = 10 V, IE = 0
Emitter-base cut-off current
VEB = 1 V, IC = 0
Collector-emitter breakdown
voltage
IC = 1 mA, IB = 0
Collector-emitter saturation
voltage
IC = 5 mA, IB = 0.5 mA
DC forward current transfer ratio VCE = 2 V, IC = 2 mA
Symbol
Min
Typ.
Max
Unit
ICES
100
µA
ICBO
100
nA
IEBO
2
µA
V(BR)CEO
4
V
VCEsat
0.1
0.5
V
hFE
50
120
250
www.vishay.com
2
Document Number 85065
Rev. 1.7, 08-Sep-08
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