TSDF1205(2000) Ver la hoja de datos (PDF) - Vishay Semiconductors
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componentes Descripción
Fabricante
TSDF1205 Datasheet PDF : 6 Pages
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TSDF1205/TSDF1205R/TSDF1205W/TSDF1205RW
Vishay Telefunken
Silicon NPN Planar RF Transistor
Electrostatic sensitive device.
Observe precautions for handling.
Applications
For low noise and small signal low power amplifiers.
This transistor has superior noise figure and
associated gain performance at UHF, VHF and micro-
wave frequencies.
Features
D Low power applications
D Very low noise figure
D High transition frequency fT = 12 GHz
21
1
2
94 9279
13 579
3
4
TSDF1205 Marking: F05
Plastic case (SOT 143)
1 = Collector, 2 = Emitter, 3 = Base, 4 = Emitter
21
94 9278
4
3
95 10831
TSDF1205R Marking: 05F
Plastic case (SOT 143R)
1 = Collector, 2 = Emitter, 3 = Base, 4 = Emitter
12
13 653
13 566
34
TSDF1205W Marking: WF0
Plastic case (SOT 343)
1 = Collector, 2 = Emitter, 3 = Base, 4 = Emitter
13 654
43
13 566
TSDF1205RW Marking: W0F
Plastic case (SOT 343R)
1 = Collector, 2 = Emitter, 3 = Base, 4 = Emitter
Absolute Maximum Ratings
Tamb = 25_C, unless otherwise specified
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Total power dissipation
Junction temperature
Storage temperature range
Test Conditions
Tamb ≤ 132 °C
Symbol
Value
Unit
VCBO
VCEO
VEBO
IC
Ptot
Tj
Tstg
9
V
4
V
2
V
12
mA
40
mW
150
°C
–65 to +150 °C
Document Number 85065
Rev. 5, 30-Jun-00
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