2N6292G(2014) Ver la hoja de datos (PDF) - ON Semiconductor
Número de pieza
componentes Descripción
Fabricante
2N6292G Datasheet PDF : 5 Pages
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2N6107, 2N6109, 2N6111 (PNP), 2N6288, 2N6292 (NPN)
40
30
20
10
0
0 20 40 60 80 100 120 140 160
TC, CASE TEMPERATURE (°C)
Figure 1. Power Derating
VCC
+ 30 V
25 ms
+11 V
RC
SCOPE
RB
0
51
D1
- 9.0 V
tr, tf ≤ 10 ns
- 4 V
DUTY CYCLE = 1.0%
RB and RC ARE VARIED TO OBTAIN DESIRED CURRENT LEVELS
D1 MUST BE FAST RECOVERY TYPE, eg:
1N5825 USED ABOVE IB ≈ 100 mA
MSD6100 USED BELOW IB ≈ 100 mA
Figure 2. Switching Time Test Circuit
2.0
1.0
0.7
0.5
0.3
0.2
0.1
0.07
0.05
0.03
0.02
0.07 0.1
TJ = 25°C
VCC = 30 V
IC/IB = 10
tr
td @ VBE(off) ≈ 5.0 V
0.2 0.3 0.5
1.0
2.0 3.0
IC, COLLECTOR CURRENT (AMP)
Figure 3. Turn−On Time
5.0 7.0
1.0
0.7
0.5 D = 0.5
0.3
0.2
0.2
0.1
0.1
0.07 0.05
0.05
0.02
0.03
0.02
0.01
SINGLE PULSE
0.01
0.01 0.02
0.05 0.1 0.2
ZqJC(t) = r(t) RqJC
RqJC = 3.125°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) - TC = P(pk) ZqJC(t)
0.5 1.0 2.0
5.0 10 20
50
t, TIME (ms)
Figure 4. Thermal Response
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
100 200
500 1.0 k
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