2N6111(2002) Ver la hoja de datos (PDF) - ON Semiconductor
Número de pieza
componentes Descripción
Fabricante
2N6111 Datasheet PDF : 8 Pages
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2N6107 2N6109 2N6111 2N6288 2N6292
VCC
+ā30 V
25 µs
+11 V
RC
SCOPE
RB
0
51
D1
-ā9.0 V
tr, tf ≤ 10 ns
-ā4 V
DUTY CYCLE = 1.0%
RB and RC ARE VARIED TO OBTAIN DESIRED CURRENT LEVELS
D1 MUST BE FAST RECOVERY TYPE, eg:
1N5825 USED ABOVE IB ≈ 100 mA
MSD6100 USED BELOW IB ≈ 100 mA
Figure 2. Switching Time Test Circuit
2.0
1.0
0.7
0.5
0.3
0.2
0.1
0.07
0.05
0.03
0.02
0.07 0.1
TJ = 25°C
VCC = 30 V
IC/IB = 10
tr
td @ VBE(off) ≈ 5.0 V
0.2 0.3 0.5
1.0
2.0 3.0
IC, COLLECTOR CURRENT (AMP)
Figure 3. Turn–On Time
5.0 7.0
1.0
0.7
0.5
D = 0.5
0.3
0.2
0.2
0.1
0.1
0.07 0.05
0.05
0.02
0.03
0.02
0.01
SINGLE PULSE
0.01
0.01 0.02
0.05 0.1 0.2
ZθJC(t) = r(t) RθJC
RθJC = 3.125°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) - TC = P(pk) ZθJC(t)
0.5 1.0 2.0
5.0 10 20
50
t, TIME (ms)
Figure 4. Thermal Response
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
100 200
500 1.0 k
15
10
0.1 ms
7.0
0.5 ms
5.0
3.0
dc
2.0
0.1
ms
1.0
0.7
0.5
0.3
0.2
0.15
1.0
CURRENT LIMIT
SECONDARY
BREAKDOWN LIMIT
THERMAL LIMIT
@ TC = 25°C (SINGLE PULSE)
5.0 ms
2.0 3.0 5.0 7.0 10
20 30 50 70 100
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 5. Active–Region Safe Operating Area
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC – VCE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 5 is based on TJ(pk) = 150_C; TC is
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided TJ(pk)
v 150_C. TJ(pk) may be calculated from the data in
Figure 4. At high case temperatures, thermal limitations will
reduce the power that can be handled to values less than the
limitations imposed by second breakdown.
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