FDW2521C Ver la hoja de datos (PDF) - Fairchild Semiconductor
Número de pieza
componentes Descripción
Fabricante
FDW2521C Datasheet PDF : 8 Pages
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Typical Characteristics: Q2
5
ID = -3.8A
4
3
VDS = -5V
-10V
-15V
2
1
0
0
3
6
9
12
Qg, GATE CHARGE (nC)
Figure 17. Gate Charge Characteristics.
100
10
RDS(ON) LIMIT
1
VGS = -4.5V
0.1
SINGLE PULSE
RθJA = 250oC/W
TA = 25oC
100µs
1ms
10ms
100ms
1s
10s
DC
0.01
0.01
0.1
1
10
100
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 19. Maximum Safe Operating Area.
1800
1500
1200
900
600
300
0
0
CISS
f = 1MHz
VGS = 0 V
COSS
CRSS
5
10
15
20
-VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 18. Capacitance Characteristics.
20
SINGLE PULSE
RθJA = 250°C/W
15
TA = 25°C
10
5
0
0.01
0.1
1
10
100
t1, TIME (sec)
Figure 20. Single Pulse Maximum
Power Dissipation.
1
0.1
0.01
D = 0.5
0.2
0.1
0.05
0.02
0.01
SINGLE PULSE
0.001
0.0001
0.001
0.01
0.1
1
t1, TIME (sec)
RθJA(t) = r(t) + RθJA
RθJA = 250 °C/W
P(pk)
t1
t2
TJ - TA = P * RθJA(t)
Duty Cycle, D = t1 / t2
10
100
1000
Figure 21. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.
FDW2521C Rev D(W)
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