FDW2521C(2008) Ver la hoja de datos (PDF) - Fairchild Semiconductor
Número de pieza
componentes Descripción
Fabricante
FDW2521C Datasheet PDF : 8 Pages
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Typical Characteristics: Q1
30
VGS = 4.5V
3.5V
3.0V
25
2.5V
20
2.0V
15
10
5
0
0
0.5
1
1.5
2
2.5
3
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics.
1.6
ID = 5.5A
VGS = 4.5V
1.4
1.2
1
0.8
0.6
-50 -25
0
25
50
75 100 125 150
TJ, JUNCTION TEMPERATURE (oC)
Figure 3. On-Resistance Variation with
Temperature.
30
VDS = 5V
25
20
TA = -55oC
25oC
125oC
15
10
5
0
0.5
1
1.5
2
2.5
3
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics.
2.5
2
VGS = 2.0V
1.5
2.5V
3.0V
1
3.5V
4.0V
4.5V
0.5
0
5
10
15
20
25
30
ID, DRAIN CURRENT (A)
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.07
0.06
0.05
0.04
0.03
0.02
0.01
0
1
ID = 2.8 A
TA = 25oC
TA =
125oC
2
3
4
5
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
100
VGS = 0V
10
1
TA = 125oC
0.1
0.01
25oC
-55oC
0.001
0.0001
0
0.2
0.4
0.6
0.8
1
1.2
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDW2521C Rev D1(W)
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