MJF6388G(2008) Ver la hoja de datos (PDF) - ON Semiconductor
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MJF6388G Datasheet PDF : 8 Pages
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MJF6388 (NPN),
MJF6668 (PNP)
Preferred Device
Complementary Power
Darlingtons
For Isolated Package Applications
Designed for general−purpose amplifiers and switching
applications, where the mounting surface of the device is required to
be electrically isolated from the heatsink or chassis.
Features
• Isolated Overmold Package, TO−220 Type
• Electrically Similar to the Popular 2N6388, 2N6668, TIP102, and
TIP107
• 100 VCEO(sus)
• 10 A Rated Collector Current
• No Isolating Washers Required
• Reduced System Cost
• High DC Current Gain − 1000 (Min) @ IC = 5.0 Adc
• High Isolation Voltage (up to 4500 VRMS)
• Case 221D is UL Recognized at 3500 VRMS: File #E69369
• Pb−Free Packages are Available*
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ MAXIMUM RATINGS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Rating
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Collector−Emitter Voltage
Collector−Base Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Emitter−Base Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ RMS Isolation Voltage (Note 1)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ (t = 0.3 sec, R.H. ≤ 30%, TA = 25_C)
Per Figure 14
Symbol
VCEO
VCB
VEB
VISOL
Value
100
100
5.0
4500
Unit
Vdc
Vdc
Vdc
V
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Collector Current − Continuous
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ − Peak (Note 2)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Base Current − Continuous
Total Power Dissipation (Note 3) @ TC = 25_C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Derate above 25_C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Total Power Dissipation @ TA = 25_C
Derate above 25_C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Operating and Storage Temperature Range
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ THERMAL CHARACTERISTICS
IC
IB
PD
PD
TJ, Tstg
10
Adc
15
1.0
Adc
40
W
0.31
W/_C
2.0
0.016
W
W/_C
–65 to +150 _C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Characteristic
Symbol
Max
Unit
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Thermal Resistance, Junction−to−Case (Note 3) RqJC
4.0
_C/W
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Thermal Resistance, Junction−to−Ambient
RqJA
62.5
_C/W
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Lead Temperature for Soldering Purposes
TL
260
_C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. Proper strike and creepage distance must be provided.
2. Pulse Test: Pulse Width = 5.0 ms, Duty Cycle v 10%.
3. Measurement made with thermocouple contacting the bottom insulated
surface (in a location beneath the die), the devices mounted on a heatsink with
thermal grease and a mounting torque of ≥ 6 in. lbs.
http://onsemi.com
COMPLEMENTARY SILICON
POWER DARLINGTONS
10 AMPERES
100 VOLTS, 40 WATTS
NPN
COLLECTOR 2
PNP
COLLECTOR 2
BASE
1
BASE
1
EMITTER 3
MJF6388
EMITTER 3
MJF6668
MARKING
DIAGRAM
1
23
TO−220 FULLPACK
CASE 221D
STYLE 2
UL RECOGNIZED
MJF6xy8G
AYWW
MJF6xy8
G
A
Y
WW
= Specific Device Code
x = 3 or 6
y = 6 or 8
= Pb−Free Package
= Assembly Location
= Year
= Work Week
ORDERING INFORMATION
Device
MJF6388
MJF6388G
MJF6668
MJF6668G
Package
Shipping
TO−220 FULLPACK 50 Units/Rail
TO−220 FULLPACK 50 Units/Rail
(Pb−Free)
TO−220 FULLPACK 50 Units/Rail
TO−220 FULLPACK 50 Units/Rail
(Pb−Free)
*For additional information on our Pb−Free strategy
and soldering details, please download the
ON Semiconductor Soldering and Mounting
Techniques Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2008
1
September, 2008 − Rev. 10
Publication Order Number:
MJF6388/D
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