ZDT6757 Ver la hoja de datos (PDF) - Zetex => Diodes

Número de pieza

componentes Descripción

Fabricante

ZDT6757

SM-8 COMPLEMENTARY MEDIUM POWER TRANSISTORS

Zetex => Diodes 

ZDT6757

PNP TRANSISTOR

ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).

PARAMETER

SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.

Collector-Base

Breakdown Voltage

V(BR)CBO -300

V

IC=-100µA, IE=0

Collector-Emitter

Breakdown Voltage

V(BR)CEO -300

V

IC=-10mA, IB=0*

Emitter-Base

Breakdown Voltage

V(BR)EBO -5

V

IE=-100µA, IC=0

Collector Cutoff

ICBO

Current

Emitter Cutoff Current IEBO

Collector-Emitter

Saturation Voltage

VCE(sat)

nA

-100 nA

-100 nA

-0.5 V

VCB=-160V, IE=0

VCB=-200V, IE=0

VEB=-3V, IC=0

IC=-100mA, IB=-10mA*

Base-Emitter

Saturation Voltage

VBE(sat)

-1.0 V

IC=-100mA, IB=-10mA*

Base-Emitter Turn-On VBE(on)

Voltage

-1.0 V

IC=-100mA, VCE=-5V*

Static Forward

hFE

50

Current Transfer Ratio

40

Transition

Frequency

fT

30

MHz

IC=-100mA, VCE=-5V*

IC=-10mA, VCE=-5V*

IC=-10mA, VCE=-20V

f=20MHz

Output Capacitance Cobo

20

pF

*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%

For typical characteristics graphs see FZT757 datasheet.

VCB=-20V, f=1MHz

3 - 380

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