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TS27L4IPT(2009) Ver la hoja de datos (PDF) - STMicroelectronics

Número de pieza
componentes Descripción
Fabricante
TS27L4IPT
(Rev.:2009)
ST-Microelectronics
STMicroelectronics ST-Microelectronics
TS27L4IPT Datasheet PDF : 15 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
TS27L4
3
Electrical characteristics
Electrical characteristics
Table 3.
Symbol
VCC+ = +10 V, VCC- = 0 V, Tamb = +25° C (unless otherwise specified)
Parameter
TS27L4C/AC
TS27L4I/AI
Unit
Min. Typ. Max. Min. Typ. Max.
Vio
DVio
Iio
Iib
VOH
VOL
Avd
GBP
CMR
SVR
ICC
Io
Isink
SR
Input offset voltage
Vo = 1.4V, Vic = 0V
TS27L4
TS27L4A
Tmin Tamb Tmax
TS27L4
TS27L4A
Input offset voltage drift
Input offset current (1)
Vic = 5V, VO = 5V
Tmin Tamb Tmax
Input bias current (1)
Vic = 5V, VO = 5V
Tmin Tamb Tmax
High level output voltage
Vid = 100mV, RL = 1MΩ
Tmin Tamb Tmax
Low level output voltage
Vid = -100mV
Large signal voltage gain
ViC = 5V, RL = 1MΩ, Vo = 1V to 6V
Tmin Tamb Tmax
Gain bandwidth product
Av = 40dB, RL = 1MΩ, CL = 100pF, fin = 100kHz
Common mode rejection ratio
ViC = 1V to 7.4V, Vo = 1.4V
Supply voltage rejection ratio
VCC+ = 5V to 10V, Vo = 1.4V
Supply current (per amplifier)
Av = 1, no load, Vo = 5V
Tmin Tamb Tmax
Output short circuit current
Vo = 0V, Vid = 100mV
Output sink current
Vo = VCC, Vid = -100mV
Slew rate at unity gain
RL = 1MΩ, CL = 100pF, Vi = 3 to 7V
1.1 10
0.9 5
12
6.5
2
1.1 10
0.9 5
mV
12
6.5
2
µV/°C
1
100
1
pA
200
1
150
1
pA
300
8.8 9
8.8 9
V
8.7
8.6
50
50
mV
60 100
45
0.1
65 80
60 80
60 100
40
0.1
65 80
60 80
V/mV
MHz
dB
dB
10 15
17
60
45
0.04
10 15
µA
18
60
mA
45
mA
0.04
V/µs
5/15

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