TPM2323-60 Ver la hoja de datos (PDF) - Toshiba

Número de pieza

componentes Descripción

Fabricante

TPM2323-60

MICROWAVE POWER GaAs FET

Toshiba 

TPM2323-60

ABSOLUTE MAXIMUM RATINGS ( Ta= 25°C )

CHARACTERISTICS

Drain-Source Voltage

Gate-Source Voltage

Drain Current

Total Power Dissipation (Tc= 25 °C )

Channel Temperature

Storage

SYMBOL

VDS

VGS

IDS

PT

Tch

Tstg

UNIT

V

V

A

W

°C

°C

PACKAGE OUTLINE (2-16G1B)

RATING

15

-5

26.0

187.5

175

-65 ∼ +175

Unit in mm

c Gate

d Source

e Drain

HANDLING PRECAUTIONS FOR PACKAGE MODEL

Soldering iron should be grounded and the operating time should not exceed 10 seconds

at 260°C.

2

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